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Growth of planar non-polar (1-100) m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) achieved

Foreign code F120007056
File No. E06714KR-D1
Posted date Nov 22, 2012
Country Republic of Korea
Application number 20127010536
Gazette No. 20120064713
Gazette No. 101499203
Date of filing May 31, 2006
Gazette Date Jun 19, 2012
Gazette Date Mar 18, 2015
International application number US2006020995
International publication number WO2006130622
Date of international filing May 31, 2006
Date of international publication Dec 7, 2006
Priority data
  • 60/685,908P (May 31, 2005) US
  • 2006US020995 (May 31, 2006) WO
Title Growth of planar non-polar (1-100) m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) achieved
Abstract A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD).
The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
(From US7338828 B2)
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
  • Inventor
  • IMER BILGE M
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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