QUANTUM NANODOTS, TWO-DIMENSIONAL QUANTUM NANODOT ARRAY AND SEMICONDUCTOR DEVICE USING SAME AND MANUFACTURING METHOD THEREFOR
Presented are quantum nanodots, a two-dimensional quantum nanodot array, and a semiconductor device using the same and a manufacturing method therefor. Quantum nanodots (3) are comprised of semiconductors, and the outer diameter of the quantum nanodots in the horizontal direction is no more than twice the radius of the bore of excitors in the semiconductor. A two-dimensional quantum nanodot array (1) is configured so that the quantum nanodots (3) are disposed uniformly in two-dimensions with the gap between the nanodots (3) being greater than 1 nm. An intermediate layer (6) that comprises a semiconductor or an insulator and that fills the area between quantum nanodot arrays (10) may also be included. Since the quantum nanodots are highly oriented and very dense, the quantum confinement effect is high. As a result, direct transition-type luminescence occurs in the quantum nanodots (3), which are comprised of Si. Also, in the two-dimensional quantum nanodot array including the intermediate layer (6), the optical properties and transport properties can be controlled.