Top > Search of International Patents > SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE meetings achieved

Foreign code F130007179
Posted date Mar 5, 2013
Country WIPO
International application number 2011JP055546
International publication number WO 2011/111754
Date of international filing Mar 9, 2011
Date of international publication Sep 15, 2011
Priority data
  • P2010-052173 (Mar 9, 2010) JP
Title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE meetings achieved
Abstract

Disclosed is a semiconductor device in which a diode and a transistor coexist on the same substrate, and in which leakage current that is generated unrelated to control performed by a gate electrode of the transistor is suppressed, and also provided is a method for manufacturing the semiconductor device. A P-type well diffusion layer and a P-type extraction electrode region are formed in an N-type semiconductor layer, which is formed by a high resistance N-type substrate, and are fixed to ground potential by an electrode. The potential near the surface of the P-type well diffusion layer is held at the ground potential because a depletion layer that spreads toward the P-type well diffusion layer does not reach the boundary surface with an embedded oxide film. When a voltage is applied from a power supply voltage to the rear surface of the N-type semiconductor layer and a cathode electrode, the generation of leakage current unrelated to the control performed by the gate electrode can be suppressed because a channel region on the embedded oxide film side of a MOS-type transistor formed in the P-type semiconductor layer does not act.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION,
  • OKI SEMICONDUCTOR CO., LTD,
  • ARAI, YASUO,
  • OKIHARA, MASAO,
  • KASAI, HIROKI
  • Inventor
  • ARAI, YASUO,
  • OKIHARA, MASAO,
  • KASAI, HIROKI
IPC(International Patent Classification)
Please contact us by E-mail if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close