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GRAPHENE AND METHOD FOR PRODUCING SAME meetings

Foreign code F130007260
File No. 821-1315
Posted date Apr 3, 2013
Country WIPO
International application number 2013JP054466
International publication number WO 2013/125669
Date of international filing Feb 22, 2013
Date of international publication Aug 29, 2013
Priority data
  • P2012-038609 (Feb 24, 2012) JP
Title GRAPHENE AND METHOD FOR PRODUCING SAME meetings
Abstract

First, in a first step (S101), a SiC substrate is arranged in an inert atmosphere. Next, in a second step (S102), graphene is formed on the surface of the SiC substrate by heating the SiC substrate in the inert atmosphere and evaporating the silicon on the surface of the SiC substrate. The second step (S102) is performed under production conditions such that the root-mean-square surface roughness of the surface of the formed graphene becomes 0.5 nm or less. Graphene with a surface having a root-mean-square surface roughness of 0.5 nm or less is in a single-layer state and has a high-quality crystal state in which the occurrence of crystal defects etc. is suppressed.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • THE UNIVERSITY OF TOKUSHIMA
  • Inventor
  • NAGASE,MASAO
IPC(International Patent Classification)

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