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Clean unit

Foreign code F130007262
Posted date Apr 4, 2013
Country China
Application number 200580030115
Gazette No. 101015068
Gazette No. 101015068
Date of filing Sep 8, 2005
Gazette Date Aug 8, 2007
Gazette Date Mar 30, 2011
Priority data
  • P2004-262040 (Sep 9, 2004) JP
  • P2004-375089 (Dec 24, 2004) JP
Title Clean unit
Abstract

Memory device is made based upon a structure comprising a lamination of at least two thin pieces each having a periodically laminated configuration of conductive layers (preferably metals) each having a thickness in the range from 0.2 nm to 60 nm, and dielectric layers, each having a thickness larger than the thickness of each the conductive layer, such that the layers cross each other and edges of the conductive layers are opposed to each other. The thickness of said conductive layer is preferably in the range from 0.2 nm to 30 nm, and the thickness of said dielectric is typically in the range from 2 nm to 200 mum. The recording medium is insulator layer or nano-bridge structure.

  • Applicant
  • UNIV HOKKAIDO
  • Inventor
  • ISHIBASHI AKIRA
IPC(International Patent Classification)
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