Top > Search of International Patents > THIN-FILM FORMATION METHOD, THIN-FILM FORMATION DEVICE, OBJECT TO BE TREATED HAVING COATING FILM FORMED THEREON, DIE AND TOOL

THIN-FILM FORMATION METHOD, THIN-FILM FORMATION DEVICE, OBJECT TO BE TREATED HAVING COATING FILM FORMED THEREON, DIE AND TOOL

Foreign code F130007294
File No. S2011-0869-N0
Posted date Apr 11, 2013
Country WIPO
International application number 2012JP005957
International publication number WO 2013/042355
Date of international filing Sep 20, 2012
Date of international publication Mar 28, 2013
Priority data
  • P2011-208140 (Sep 22, 2011) JP
Title THIN-FILM FORMATION METHOD, THIN-FILM FORMATION DEVICE, OBJECT TO BE TREATED HAVING COATING FILM FORMED THEREON, DIE AND TOOL
Abstract

[Problem] To provide a means for forming a thin-film in a desired part of an object to be treated. [Solution] The thin-film formation means according to the present invention is part of a thin-film formation method which supplies electricity to a raw-material gas in a reduced pressure container, converting the raw-material gas to plasma, and irradiates the plasma, thus forming a thin-film on the surface of an object to be treated. Therein, the effect of a magnetic field generated by a magnetic field generating means is used to form the thin-film in a desired part. The effect of the magnetic field focuses the flux of the plasma in a desired part of the surface of the object to be treated, thus enabling the thin-film to be formed in the desired part.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • SHIBAURA INSTITUTE OF TECHNOLOGY,
  • AIZAWA, TATSUHIKO,
  • MORITA, HIROSHI,
  • KUROSUMI, SHUICHI
  • Inventor
  • AIZAWA, TATSUHIKO,
  • MORITA, HIROSHI,
  • KUROSUMI, SHUICHI
IPC(International Patent Classification)

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