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SOLID-STATE ELECTRONIC DEVICE

Foreign code F130007375
File No. E086P41
Posted date May 30, 2013
Country WIPO
International application number 2012JP077623
International publication number WO 2013/069470
Date of international filing Oct 25, 2012
Date of international publication May 16, 2013
Priority data
  • P2011-245915 (Nov 9, 2011) JP
Title SOLID-STATE ELECTRONIC DEVICE
Abstract

One solid-state electronic device of the present invention is provided with an oxide layer that is formed by heating a precursor layer, which uses, as a starting material, a precursor solution that contains a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, in an oxygen-containing atmosphere, said oxide layer being formed of the bismuth (Bi) and the niobium (Nb). (In this connection, the oxide layer may contain unavoidable impurities.) The heating temperature for forming the oxide layer is from 520 DEG C to 650 DEG C (inclusive).

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, TATSUYA,
  • TOKUMITSU, EISUKE,
  • ONOUE, MASATOSHI,
  • MIYASAKO, TAKAAKI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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