SOLID-STATE ELECTRONIC DEVICE
|Posted date||May 30, 2013|
|International application number||2012JP077623|
|International publication number||WO 2013/069470|
|Date of international filing||Oct 25, 2012|
|Date of international publication||May 16, 2013|
|Title||SOLID-STATE ELECTRONIC DEVICE|
One solid-state electronic device of the present invention is provided with an oxide layer that is formed by heating a precursor layer, which uses, as a starting material, a precursor solution that contains a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, in an oxygen-containing atmosphere, said oxide layer being formed of the bismuth (Bi) and the niobium (Nb). (In this connection, the oxide layer may contain unavoidable impurities.) The heating temperature for forming the oxide layer is from 520 DEG C to 650 DEG C (inclusive).
|IPC(International Patent Classification)|
|Reference ( R and D project )||ERATO SHIMODA Nano-Liquid Process AREA|
Contact Information for " SOLID-STATE ELECTRONIC DEVICE "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
- Fax: 81-3-5214-8476