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SOLID-STATE ELECTRONIC DEVICE

Foreign code F130007376
File No. E086P42
Posted date May 30, 2013
Country WIPO
International application number 2012JP077624
International publication number WO 2013/069471
Date of international filing Oct 25, 2012
Date of international publication May 16, 2013
Priority data
  • P2011-245916 (Nov 9, 2011) JP
Title SOLID-STATE ELECTRONIC DEVICE
Abstract

One solid-state electronic device of the present invention is provided with an oxide layer which is formed of bismuth (Bi) and niobium (Nb) (and which may contain unavoidable impurities). The oxide layer has a crystal phase that has a pyrochlore crystal structure and/or a beta-BiNbO4 crystal structure, and the carbon content in the oxide layer is 1.5 atm% or less.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, TATSUYA,
  • TOKUMITSU, EISUKE,
  • ONOUE, MASATOSHI,
  • MIYASAKO, TAKAAKI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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