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THIN-FILM TRANSISTOR AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR

Foreign code F130007387
File No. E086P43
Posted date Jun 5, 2013
Country WIPO
International application number 2012JP079609
International publication number WO 2013/073601
Date of international filing Nov 15, 2012
Date of international publication May 23, 2013
Priority data
  • P2011-252174 (Nov 18, 2011) JP
Title THIN-FILM TRANSISTOR AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR
Abstract

One thin-film transistor (100) is provided with layered oxides (30), between a gate electrode (220) and a channel (40), comprising a layer (32) that is in contact with a gate electrode (20) and that comprises a first oxide (which may contain unavoidable impurities) containing bismuth (Bi) and niobium (Nb), and a layer (34) that is contact with the channel (40) and that comprises a second oxide (which may contain unavoidable impurities) which is one type selected from a group consisting of an oxide containing lanthanum (La) and tantalum (Ta), an oxide containing lanthanum (La) and zirconium (Zr), and an oxide containing strontium (Sr) and tantalum (Ta)

and the channel (40) is a channel oxide (which may contain unavoidable impurities) and comprises indium (In) and zinc (Zn).

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, TATSUYA,
  • MIYASAKO, TAKAAKI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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