THIN-FILM TRANSISTOR AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR
|Posted date||Jun 5, 2013|
|International application number||2012JP079609|
|International publication number||WO 2013/073601|
|Date of international filing||Nov 15, 2012|
|Date of international publication||May 23, 2013|
|Title||THIN-FILM TRANSISTOR AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR|
One thin-film transistor (100) is provided with layered oxides (30), between a gate electrode (220) and a channel (40), comprising a layer (32) that is in contact with a gate electrode (20) and that comprises a first oxide (which may contain unavoidable impurities) containing bismuth (Bi) and niobium (Nb), and a layer (34) that is contact with the channel (40) and that comprises a second oxide (which may contain unavoidable impurities) which is one type selected from a group consisting of an oxide containing lanthanum (La) and tantalum (Ta), an oxide containing lanthanum (La) and zirconium (Zr), and an oxide containing strontium (Sr) and tantalum (Ta)
and the channel (40) is a channel oxide (which may contain unavoidable impurities) and comprises indium (In) and zinc (Zn).
|IPC(International Patent Classification)||
|Reference ( R and D project )||ERATO SHIMODA Nano-Liquid Process AREA|
Contact Information for " THIN-FILM TRANSISTOR AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR "
- Japan Science and Technology Agency Department of Intellectual Property Management
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