Top > Search of International Patents > LAMINATED STRUCTURE, FERROELECTRIC GATE THIN FILM TRANSISTOR, AND FERROELECTRIC THIN FILM CAPACITOR

LAMINATED STRUCTURE, FERROELECTRIC GATE THIN FILM TRANSISTOR, AND FERROELECTRIC THIN FILM CAPACITOR

Foreign code F130007388
File No. E086P33
Posted date Jun 5, 2013
Country WIPO
International application number 2012JP077326
International publication number WO 2013/073347
Date of international filing Oct 23, 2012
Date of international publication May 23, 2013
Priority data
  • P2011-252182 (Nov 18, 2011) JP
Title LAMINATED STRUCTURE, FERROELECTRIC GATE THIN FILM TRANSISTOR, AND FERROELECTRIC THIN FILM CAPACITOR
Abstract

This ferroelectric gate thin film transistor (20) comprises: a channel layer (28)

a gate electrode layer (22) that controls the conduction state of the channel layer (28)

and a gate insulation layer (25) comprising a ferroelectric layer arranged between the channel layer (28) and the gate electrode layer (22). The gate insulation layer (ferroelectric layer) (25) has a structure wherein a PZT layer (23) and a BLT layer (24) (Pb diffusion-preventing layer) are stacked

and the channel layer (28) (oxide conductor layer) (28) is arranged on a surface on the BLT layer (Pb diffusion-preventing layer) (24) side of the gate insulation layer (ferroelectric layer) (25). This ferroelectric gate thin film transistor (20) is capable of solving a variety of issues, such as the issue of ready deterioration of transmission properties of ferroelectric gate thin film transistors (e.g., ready narrowing of memory window width), and other issues that may arise caused by diffusion of Pb atoms from PZT layers in oxide conductor layers.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, TATSUYA,
  • MIYASAKO, TAKAAKI,
  • TOKUMITSU, EISUKE,
  • BUI NGUYEN QUOC TRINH
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close