Top > Search of International Patents > METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM

METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM

Foreign code F130007390
File No. E086P32
Posted date Jun 5, 2013
Country WIPO
International application number 2012JP080254
International publication number WO 2013/073711
Date of international filing Nov 15, 2012
Date of international publication May 23, 2013
Priority data
  • P2011-252387 (Nov 18, 2011) JP
Title METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM
Abstract

A method for forming an amorphous conductive oxide film, which is characterized by comprising a step wherein a coating film is formed by applying a composition onto a substrate and heating the coating film in an oxidizing atmosphere, said composition containing (A1) a y parts by mole of one or more metal compounds that are selected from the group consisting of carboxylate salts, alkoxides, diketonatos, nitrate salts and halides of a metal that is selected from among lanthanoids (excluding cerium), (A2) a (1 - y) parts by mole of one or more metal compounds that are selected from the group consisting of carboxylate salts, alkoxides, diketonatos, nitrate salts and halides of a metal that is selected from among lead, bismuth, nickel, palladium, copper and silver, (B) 1 part by mole of one or more metal compounds that are selected from the group consisting of carboxylate salts, alkoxides, diketonatos, nitrate salts, halides, nitrosyl carboxylate salts, nitrosyl nitrate salts, nitrosyl sulfate salts and nitrosyl halides of a metal that is selected from among ruthenium, iridium, rhodium and cobalt and (C) a solvent that contains one or more substances that are selected from the group consisting of carboxylic acids, alcohols, ketones, diols and glycol ethers.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA TATSUYA,
  • LI JINWANG
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close