SILICON SOLAR CELL AND MANUFACTURING METHOD FOR SAME
|Posted date||Jul 4, 2013|
|International application number||2012JP060044|
|International publication number||WO 2012/144420|
|Date of international filing||Apr 12, 2012|
|Date of international publication||Oct 26, 2012|
|Title||SILICON SOLAR CELL AND MANUFACTURING METHOD FOR SAME|
This silicon solar cell reduces absorption loss in an n-type silicon layer and ZnO, or similar, which is a transparent electrode, and has increased photoelectric current and improved efficiency. A silicon solar cell is formed by forming, on a substrate, a cell layer having at least one unit cell formed from a p-type silicon layer, an i-type silicon layer and an n-type silicon layer, and forming an electrode layer on one surface of the substrate-side of the cell layer and forming a facing electrode on one surface of the cell layer which faces the substrate. The silicon solar cell is characterised in that: a sheet layer containing i-type microcrystalline Si:H is provided between the i-type silicon layer and the n-type silicon layer, said sheet layer having a film thickness of 1-500nm and a crystallinity of at least 40%
the n-type silicon layer contains n-type SixM1-x:H (M is O, N or C, 0<x<1), has a film thickness of 40-500nm, and a crystallinity of at least 10%.
|IPC(International Patent Classification)|
Contact Information for " SILICON SOLAR CELL AND MANUFACTURING METHOD FOR SAME "
- Tokyo Institute of Technology Office of Research and Innovation
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