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SILICON SOLAR CELL AND MANUFACTURING METHOD FOR SAME

Foreign code F130007449
Posted date Jul 4, 2013
Country WIPO
International application number 2012JP060044
International publication number WO 2012/144420
Date of international filing Apr 12, 2012
Date of international publication Oct 26, 2012
Priority data
  • P2011-096055 (Apr 22, 2011) JP
Title SILICON SOLAR CELL AND MANUFACTURING METHOD FOR SAME
Abstract

This silicon solar cell reduces absorption loss in an n-type silicon layer and ZnO, or similar, which is a transparent electrode, and has increased photoelectric current and improved efficiency. A silicon solar cell is formed by forming, on a substrate, a cell layer having at least one unit cell formed from a p-type silicon layer, an i-type silicon layer and an n-type silicon layer, and forming an electrode layer on one surface of the substrate-side of the cell layer and forming a facing electrode on one surface of the cell layer which faces the substrate. The silicon solar cell is characterised in that: a sheet layer containing i-type microcrystalline Si:H is provided between the i-type silicon layer and the n-type silicon layer, said sheet layer having a film thickness of 1-500nm and a crystallinity of at least 40%

the n-type silicon layer contains n-type SixM1-x:H (M is O, N or C, 0<x<1), has a film thickness of 40-500nm, and a crystallinity of at least 10%.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • TOKYO INSTITUTE OF TECHNOLOGY,
  • KONAGAI, MAKOTO
  • Inventor
  • KONAGAI, MAKOTO
IPC(International Patent Classification)
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