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Organic thin-film photoelectric conversion element and method of manufacturing the same

外国特許コード F130007479
整理番号 1079
掲載日 2013年7月10日
出願国 アメリカ合衆国
出願番号 99136506
公報番号 20090151787
公報番号 8012530
出願日 平成18年9月6日(2006.9.6)
公報発行日 平成21年6月18日(2009.6.18)
公報発行日 平成23年9月6日(2011.9.6)
国際出願番号 JP2006317673
国際公開番号 WO2007029750
国際出願日 平成18年9月6日(2006.9.6)
国際公開日 平成19年3月15日(2007.3.15)
優先権データ
  • 特願2005-258527 (2005.9.6) JP
  • 特願2006-066674 (2006.3.10) JP
  • 2006WO-JP317673 (2006.9.6) WO
発明の名称 (英語) Organic thin-film photoelectric conversion element and method of manufacturing the same
発明の概要(英語) (US8012530)
The objectives of the present invention are to enable the manufacturing of an organic thin-film photoelectric conversion element under normal atmosphere, improve the photoelectric conversion efficiency of the element, and enhance its durability.
A hole-blocking TiO2 layer is created between the photoelectric conversion layer and the electrode by a wet process.
In the manufacturing process, the hole-blocking TiO2 layer is air-dried so that it will be an amorphous layer.
It is possible to provide a concentration gradient layer of PCBM/P3HT in which the PCBM concentration is higher in a region close to the hole-blocking TiO2 layer.
This structure will reduce the electric resistance of that region and minimize the current loss within the photoelectric conversion element.
In the vicinity of the hole-blocking TiO2 layer, the PCBM concentration is increased, which in turn makes it easier for electrons to flow into the TiO2 layer since PCBM is electrically conductive.
Due to these features, the organic thin-film photoelectric conversion element having the gradient structure of the present embodiment has a high level of photoelectric conversion efficiency and good durability.
特許請求の範囲(英語) [claim1]
1. A method of manufacturing an organic thin-film photoelectric conversion element, comprising: creating a buffer layer and a photoelectric conversion layer on a substrate having an electrode under normal atmosphere;
providing a hole-blocking TiO2 layer on the photoelectric conversion layer by wet process without heating; and
providing an opposite electrode on the hole-blocking TiO2 layer,
wherein the photoelectric conversion layer is provided with a concentration gradient of an n-type organic semiconductor component and a p-type organic semiconductor component across a thickness of the photoelectric conversion layer, and
the concentration gradient on the photoelectric conversion layer is created by applying a poor solvent on the photoelectric conversion layer after the photoelectric conversion layer is created and then vaporizing the poor solvent, where: the poor solvent is a solvent in which the n-type organic semiconductor component can be dissolved;
the poor solvent has a boiling point higher than that of a good solvent used in a process of creating the photoelectric conversion layer; and
the poor solvent can be distilled away at room temperature.
[claim2]
2. The method of manufacturing an organic thin-film photoelectric conversion element according to claim 1, wherein the hole-blocking TiO2 layer is created by applying a solution of Ti alkoxide and then drying it at room temperature.
[claim3]
3. The method of manufacturing an organic thin-film photoelectric conversion element according to claim 2, wherein the hole-blocking TiO2 layer is created by using a Ti alkoxide solution in which Ti alkoxide is dissolved in ethanol in concentrations from 0.02 to 0.05 mol/l.
[claim4]
4. The method of manufacturing an organic thin-film photoelectric conversion element according to claim 1, wherein the n-type organic semiconductor component is PCBM, the p-type organic semiconductor component is P3HT, the good solvent is chlorobenzene, and the poor solvent is one of NMP, benzonitrile and anisole, or a mixture of two or more from the group consisting of NMP, benzonitrile and anisole.
[claim5]
5. The method of manufacturing an organic thin-film photoelectric conversion element according to claim 1, wherein the photoelectric conversion layer is created using a solution in which PCBM as the n-type organic semiconductor component and P3HT as the p-type organic semiconductor component are dissolved in the good solvent consisting of chlorobenzene and the poor solvent consisting of one of NMP, benzonitrile and anisole, or a mixture of two or more from the group consisting of NMP, benzonitrile and anisole.
[claim6]
6. The method of manufacturing an organic thin-film photoelectric conversion element according to claim 1, further comprising an annealing process carried out after the photoelectric conversion layer is created.
  • 発明者/出願人(英語)
  • YOSHIKAWA SUSUMU
  • UEHARA KAKU
  • HAYAKAWA AKINOBU
  • KYOTO UNIVERSITY
国際特許分類(IPC)
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