THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR

• 特願2011-281464 (2011.12.22) JP

[Problem] To increase the performance of thin film transistors that use an oxide material for a gate dielectric layer, and to simplify and reduce the energy consumption of the process for fabricating such thin film transistors. [Solution] One thin film transistor (100) of the present invention is provided with a first oxide layer (32) (may contain unavoidable impurities) that is configured as follows: being provided between a gate electrode (20) and a channel (52)

comprising lanthanum (La) and tantalum (Ta)

and that has a surface (32a) that is formed after being exposed, in the form of a precursor layer which has as a starting material a precursor solution comprising a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes, to hydrochloric acid steam. In addition, in this thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

• JAPAN SCIENCE AND TECHNOLOGY AGENCY,
• MITSUBISHI MATERIALS CORPORATION,
• MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD

• SHIMODA, TATSUYA,
• TSUKADA, HIROKAZU,
• MIYASAKO, TAKAAKI

• H01L  29/786     薄膜トランジスタ
• H01L  21/316     酸化物またはガラス性酸化物または酸化物を基礎としたガラスからなるもの
• H01L  21/336     絶縁ゲートを有するもの