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N-TYPE SEMICONDUCTOR COMPRISING AMORPHOUS SILICON CARBIDE DOPED WITH NITROGEN, AND PROCESS FOR PRODUCING N-TYPE SEMICONDUCTOR ELEMENT meetings

Foreign code F130007572
Posted date Jul 19, 2013
Country WIPO
International application number 2012JP007029
International publication number WO 2013/065315
Date of international filing Nov 1, 2012
Date of international publication May 10, 2013
Priority data
  • P2011-241063 (Nov 2, 2011) JP
Title N-TYPE SEMICONDUCTOR COMPRISING AMORPHOUS SILICON CARBIDE DOPED WITH NITROGEN, AND PROCESS FOR PRODUCING N-TYPE SEMICONDUCTOR ELEMENT meetings
Abstract

The invention addresses the problem of providing an n-type semiconductor comprising silicon carbide, the n-type semiconductor being able to be formed at a low temperature as a film, having a wide band gap, and being able to be produced at low cost. The problem is solved with an n-type semiconductor which comprises an amorphous silicon carbide doped with nitrogen, characterized by comprising silicon, carbon, and nitrogen as effective components, the ratio of the number of silicon atoms to the number of carbon atoms being 1:(3-5) and the proportion of the number of nitrogen atoms to the total number of silicon and carbon atoms being 1-5%, and with a process for producing an n-type semiconductor element, characterized by using at least one silane compound selected from alkylsilane compounds and alkoxysilane compounds and a silazane compound as raw materials and forming an n-type semiconductor as a thin film on a substrate by a plasma-assisted CVD method.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • YAMAGUCHI UNIVERSITY
  • Inventor
  • HONDA, KENSUKE
IPC(International Patent Classification)
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