NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE
外国特許コード | F130007591 |
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整理番号 | KG0102-WO01 |
掲載日 | 2013年8月5日 |
出願国 | 世界知的所有権機関(WIPO) |
国際出願番号 | 2011JP006313 |
国際公開番号 | WO 2013/069067 |
国際出願日 | 平成23年11月11日(2011.11.11) |
国際公開日 | 平成25年5月16日(2013.5.16) |
発明の名称 (英語) | NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE |
発明の概要(英語) |
A standard sample (72) for a nanometer standard prototype has a standard length which forms a length reference. This standard sample (72) has a SiC layer in which a stepped/terraced structure is formed. Furthermore, the step height is equal to a full unit height, which is the height of one period in the direction of stacking of SiC molecules, or a half unit height, which is the height of one-half period in the direction of stacking of SiC molecules. In addition, this step height is used as the standard length. Moreover, in microscopes such as STM, in which the measurement environment is a high temperature vacuum, surface reconstruction can occur while preventing a natural oxidation layer on the surface by heating with a vacuum furnace incorporated into the STM. This reconstructed surface has a regular atomic arrangement therefore, the precision of the step height is not reduced. Therefore, a standard sample that can be used in a high temperature vacuum can be achieved. |
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国際特許分類(IPC) |
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日本語項目の表示
発明の名称 | ナノメーター標準原器及びナノメーター標準原器の製造方法 |
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