NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE

A standard sample (72) for a nanometer standard prototype has a standard length which forms a length reference. This standard sample (72) has a SiC layer in which a stepped/terraced structure is formed. Furthermore, the step height is equal to a full unit height, which is the height of one period in the direction of stacking of SiC molecules, or a half unit height, which is the height of one-half period in the direction of stacking of SiC molecules. In addition, this step height is used as the standard length. Moreover, in microscopes such as STM, in which the measurement environment is a high temperature vacuum, surface reconstruction can occur while preventing a natural oxidation layer on the surface by heating with a vacuum furnace incorporated into the STM. This reconstructed surface has a regular atomic arrangement

therefore, the precision of the step height is not reduced. Therefore, a standard sample that can be used in a high temperature vacuum can be achieved.

• KWANSEI GAKUIN EDUCATIONAL FOUNDATION,
• KANEKO, TADAAKI,
• USHIO, SHOJI

• KANEKO, TADAAKI,
• USHIO, SHOJI

• G01N   1/00      サンプリング；調査用標本の調製
• B82Y  35/00      ナノ構造物の測定または分析のための方法または装置
• B82Y  40/00      ナノ構造物の製造または処理
• G01B  11/24      輪郭または曲率の測定用
• G01N   1/28      調査用標本の調製
• G01Q  40/02      キャリブレーションの基準またはその製造方法