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Method for producing single crystal silicon carbide

外国特許コード F130007594
整理番号 KG0002-US02
掲載日 2013年8月7日
出願国 アメリカ合衆国
出願番号 25064408
公報番号 20090038538
公報番号 7637998
出願日 平成20年10月14日(2008.10.14)
公報発行日 平成21年2月12日(2009.2.12)
公報発行日 平成21年12月29日(2009.12.29)
国際出願番号 JP2001004708
国際公開番号 WO2002099169
国際出願日 平成13年6月4日(2001.6.4)
国際公開日 平成14年12月12日(2002.12.12)
優先権データ
  • 2001WO-JP04708 (2001.6.4) WO
  • 2004US-10479614 (2004.6.30) US
発明の名称 (英語) Method for producing single crystal silicon carbide
発明の概要(英語) (US7637998)
Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer.
The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.
特許請求の範囲(英語) [claim1]
1. A method for producing single crystal silicon carbide, comprising: arranging a single crystal silicon carbide seed crystal and a polycrystal silicon carbide substrate in adjacent horizontal layers, in a crucible;
providing a source of metallic silicon in the crucible;
placing the crucible in a closed container;
heating the container with arranged layers and source of metallic silicon to a at least a temperature sufficient to melt the metallic silicon;
forming a metallic silicon melt layer interposed and filing the space between facing surfaces of the single crystal silicon carbide seed crystal and the polycrystal silicon carbide substrate;
forming single crystal silicon carbide on the surface of the single crystal silicon carbide seed crystal via liquid phase epitaxial growth; wherein
the maximum distance between the facing surfaces of the single crystal silicon carbide seed crystal and the polycrystal silicon carbide substrate is 50 micrometers, and
the temperature of the single crystal silicon carbide seed crystal is not different from the temperature of the polycrystal silicon carbide substrate.
[claim2]
2. The method for producing single crystal silicon carbide, according to claim 1, wherein the temperature in the heating is 1450 deg. C. or more.
[claim3]
3. The method for producing single crystal silicon carbide, according to claim 1, wherein the temperature in the heating is in the range from 2000 to 2300 deg. C.
[claim4]
4. The method for producing single crystal silicon carbide, according to claim 1, further comprising interposing a horizontal layer of metallic silicon between the single crystal silicon carbide seed crystal and the polycrystal silicon carbide substrate arranged in adjacent horizontal layers, in the crucible before the heating.
[claim5]
5. The method for producing single crystal silicon carbide, according to claim 4, wherein the temperature in the heating is 1450 deg. C. or more.
[claim6]
6. The method for producing single crystal silicon carbide, according to claim 4, wherein the temperature in the heating is in the range from 2000 to 2300 deg. C.
[claim7]
7. The method for producing single crystal silicon carbide, according to claim 1, wherein a group III metal is added in one or both of the polycrystal silicon carbide substrate and metallic silicon melt so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is p-type conductivity.
[claim8]
8. The method for producing single crystal silicon carbide, according to claim 1, wherein a group V element is added in one or both of the polycrystal silicon carbide substrate and metallic silicon melt so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is n-type conductivity.
[claim9]
9. The method for producing single crystal silicon carbide, according to claim 4, wherein a group III metal is added in one or both of the polycrystal silicon carbide substrate and metallic silicon layer so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is p-type conductivity.
[claim10]
10. The method for producing single crystal silicon carbide, according to claim 4, wherein a group V element is added in one or both of the polycrystal silicon carbide substrate and metallic silicon melt so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is n-type conductivity.
[claim11]
11. The method for producing single crystal silicon carbide, according to claim 1, wherein the surface of the single crystal silicon carbide seed crystal is an on-axis (0001) Si plane.
[claim12]
12. The method for producing single crystal silicon carbide, according to claim 4, wherein the surface of the single crystal silicon carbide seed crystal is an on-axis (0001) Si plane.
  • 発明者/出願人(英語)
  • KANEKO TADAAKI
  • ASAOKA YASUSHI
  • SANO NAOKATSU
  • KWANSEI GAKUIN
国際特許分類(IPC)
米国特許分類/主・副
  • C30B019/04
  • C30B029/36
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