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Method for producing single crystal silicon carbide

Foreign code F130007594
File No. KG0002-US02
Posted date Aug 7, 2013
Country United States of America
Application number 25064408
Gazette No. 20090038538
Gazette No. 7637998
Date of filing Oct 14, 2008
Gazette Date Feb 12, 2009
Gazette Date Dec 29, 2009
International application number JP2001004708
International publication number WO2002099169
Date of international filing Jun 4, 2001
Date of international publication Dec 12, 2002
Priority data
  • 2001WO-JP04708 (Jun 4, 2001) WO
  • 2004US-10479614 (Jun 30, 2004) US
Title Method for producing single crystal silicon carbide
Abstract (US7637998)
Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer.
The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.
Scope of claims [claim1]
1. A method for producing single crystal silicon carbide, comprising: arranging a single crystal silicon carbide seed crystal and a polycrystal silicon carbide substrate in adjacent horizontal layers, in a crucible;
providing a source of metallic silicon in the crucible;
placing the crucible in a closed container;
heating the container with arranged layers and source of metallic silicon to a at least a temperature sufficient to melt the metallic silicon;
forming a metallic silicon melt layer interposed and filing the space between facing surfaces of the single crystal silicon carbide seed crystal and the polycrystal silicon carbide substrate;
forming single crystal silicon carbide on the surface of the single crystal silicon carbide seed crystal via liquid phase epitaxial growth; wherein
the maximum distance between the facing surfaces of the single crystal silicon carbide seed crystal and the polycrystal silicon carbide substrate is 50 micrometers, and
the temperature of the single crystal silicon carbide seed crystal is not different from the temperature of the polycrystal silicon carbide substrate.
[claim2]
2. The method for producing single crystal silicon carbide, according to claim 1, wherein the temperature in the heating is 1450 deg. C. or more.
[claim3]
3. The method for producing single crystal silicon carbide, according to claim 1, wherein the temperature in the heating is in the range from 2000 to 2300 deg. C.
[claim4]
4. The method for producing single crystal silicon carbide, according to claim 1, further comprising interposing a horizontal layer of metallic silicon between the single crystal silicon carbide seed crystal and the polycrystal silicon carbide substrate arranged in adjacent horizontal layers, in the crucible before the heating.
[claim5]
5. The method for producing single crystal silicon carbide, according to claim 4, wherein the temperature in the heating is 1450 deg. C. or more.
[claim6]
6. The method for producing single crystal silicon carbide, according to claim 4, wherein the temperature in the heating is in the range from 2000 to 2300 deg. C.
[claim7]
7. The method for producing single crystal silicon carbide, according to claim 1, wherein a group III metal is added in one or both of the polycrystal silicon carbide substrate and metallic silicon melt so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is p-type conductivity.
[claim8]
8. The method for producing single crystal silicon carbide, according to claim 1, wherein a group V element is added in one or both of the polycrystal silicon carbide substrate and metallic silicon melt so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is n-type conductivity.
[claim9]
9. The method for producing single crystal silicon carbide, according to claim 4, wherein a group III metal is added in one or both of the polycrystal silicon carbide substrate and metallic silicon layer so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is p-type conductivity.
[claim10]
10. The method for producing single crystal silicon carbide, according to claim 4, wherein a group V element is added in one or both of the polycrystal silicon carbide substrate and metallic silicon melt so that the conductivity of single crystal silicon carbide liquid-phase-epitaxially grown on the surface of the single crystal silicon carbide seed crystal is n-type conductivity.
[claim11]
11. The method for producing single crystal silicon carbide, according to claim 1, wherein the surface of the single crystal silicon carbide seed crystal is an on-axis (0001) Si plane.
[claim12]
12. The method for producing single crystal silicon carbide, according to claim 4, wherein the surface of the single crystal silicon carbide seed crystal is an on-axis (0001) Si plane.
  • Inventor, and Inventor/Applicant
  • KANEKO TADAAKI
  • ASAOKA YASUSHI
  • SANO NAOKATSU
  • KWANSEI GAKUIN
IPC(International Patent Classification)
U.S. Cl./(Sub)
  • C30B019/04
  • C30B029/36
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