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THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

Foreign code F130007654
File No. E086P50
Posted date Oct 16, 2013
Country WIPO
International application number 2013JP057621
International publication number WO 2013/141197
Date of international filing Mar 18, 2013
Date of international publication Sep 26, 2013
Priority data
  • P2012-068133 (Mar 23, 2012) JP
Title THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Abstract

A thin film transistor (100) of the present invention is provided with a gate insulating layer (34), which is formed of an oxide containing lanthanum and zirconium (provided that this oxide may include impurities, and hereinafter the same shall apply with respect to oxides), between a gate electrode (20) and a channel (44). The channel (44) is formed of an oxide for channels, said oxide being composed of: a first oxide that contains indium and zinc, while containing zirconium (Zr) at an atomic ratio of from 0.015 to 0.075 (inclusive) when the indium contained therein is taken as 1

a second oxide that contains indium, while containing zirconium (Zr) at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium (In) contained therein is taken as 1

or a third oxide that contains indium, while containing lanthanum at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium contained therein is taken as 1.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, TATSUYA,
  • INOUE, SATOSHI,
  • PHAN, TRONG TUE,
  • MIYASAKO, TAKAAKI,
  • LI, JINWANG
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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