SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• 特願2012-039483 (2012.2.27) JP

A semiconductor light-emitting element (10) is provided with a GaN layer (13), an InGaN layer (14) directly above the GaN layer (13), and a multiple quantum well layer (15) directly above the InGaN layer (14). Distortion of the InGaN layer (14) due to lattice mismatch with the GaN layer (13) is partially or completely relaxed.

• YAMAGUCHI UNIVERSITY

• TADATOMO, KAZUYUKI,
• OKADA, NARIHITO

• H01L  33/32      窒素を含むもの
• H01L  33/12      応力緩和構造を有するもの，例．バッファ層