Top > Search of International Patents > SEMICONDUCTOR LIGHT-EMITTING ELEMENT

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Foreign code F130007743
Posted date Dec 5, 2013
Country WIPO
International application number 2013JP001113
International publication number WO 2013/128894
Date of international filing Feb 26, 2013
Date of international publication Sep 6, 2013
Priority data
  • P2012-039483 (Feb 27, 2012) JP
Title SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Abstract

A semiconductor light-emitting element (10) is provided with a GaN layer (13), an InGaN layer (14) directly above the GaN layer (13), and a multiple quantum well layer (15) directly above the InGaN layer (14). Distortion of the InGaN layer (14) due to lattice mismatch with the GaN layer (13) is partially or completely relaxed.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • YAMAGUCHI UNIVERSITY
  • Inventor
  • TADATOMO, KAZUYUKI,
  • OKADA, NARIHITO
IPC(International Patent Classification)

PAGE TOP

close
close
close
close
close
close