THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME
This thermoelectric material is provided with a semiconductor substrate, a semiconductor oxide film that is formed on the substrate, and a thermoelectric layer that is arranged on the oxide film. The semiconductor oxide film is provided with a first nano-opening, and the thermoelectric layer is in the form of a plurality of semiconductor nano-dots piled up on the first nano-opening so as to have a particle packed structure. At least some of the plurality of semiconductor nano-dots have second nano-openings formed in the surfaces thereof, and are connected with each other through the second nano-openings, with the crystal orientations thereof being aligned with each other. This thermoelectric material can be produced through: a step wherein a semiconductor substrate is oxidized, thereby forming a semiconductor oxide film thereon
a step wherein a first nano-opening is formed in the oxide film
and a step wherein a plurality of semiconductor nano-dots are piled up on the first nano-opening by epitaxial growth. A thermoelectric material having excellent thermoelectric conversion performance can be achieved by this configuration.