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Thin film transistor and method for manufacturing thin film transistor

Foreign code F140007818
File No. E086P50TW
Posted date Jan 20, 2014
Country Taiwan
Application number 102110167
Gazette No. 201342629
Gazette No. I591830
Date of filing Mar 22, 2013
Gazette Date Oct 16, 2013
Gazette Date Jul 11, 2017
Priority data
  • P2012-068133 (Mar 23, 2012) JP
Title Thin film transistor and method for manufacturing thin film transistor
Abstract (TWI591830)
A thin film transistor (100) of the present invention is provided with a gate insulating layer (34), which is formed of an oxide containing lanthanum and zirconium (provided that this oxide may include impurities, and hereinafter the same shall apply with respect to oxides), between a gate electrode (20) and a channel (44).
The channel (44) is formed of an oxide for channels, said oxide being composed of: a first oxide that contains indium and zinc, while containing zirconium (Zr) at an atomic ratio of from 0.015 to 0.075 (inclusive) when the indium contained therein is taken as 1; a second oxide that contains indium, while containing zirconium (Zr) at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium (In) contained therein is taken as 1; or a third oxide that contains indium, while containing lanthanum at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium contained therein is taken as 1.
Scope of claims [claim1]
1. Kinds of thin film transistors, are Yu Zhaji between the electrode and channel have by lanthanum (La) and zirconium (Zr) the oxide of constitution (may contain inevitable impurity) the floodgate extremely insulating layer; This channel is by: Includes indium (In) and zinc (Zn), and includes, when this indium (In) is one becomes over the atomicity of 0.015 below 0.075 compared to 1st of the oxide zirconium (Zr) (may contain inevitable impurity); Perhaps includes indium (In), and includes, when this indium (In) is one becomes over the atomicity of 0.055 below 0.16 compared to 2nd the oxide zirconium (Zr) (may contain inevitable impurity); Perhaps includes indium (In), and includes, when this indium (In) is one becomes over the atomicity of 0.055 below 0.16 compared to 3rd the oxide lanthanum (La) (may including inevitable impurity) the channel of constitution use the oxide.
[claim2]
2. According to claim 1, item of thin film transistor, this channel uses the oxide for the 1st oxide and for noncrystal.
[claim3]
3. According to claim 1, item of thin film transistor, this channel uses the oxide for the 2nd oxide and for noncrystal.
[claim4]
4. According to claim 1, item of thin film transistor, this channel uses the oxide for the 3rd oxide and for noncrystal.
[claim5]
5. According to claim 1, to 4 items of any item of thin film transistors, the ratio of dielectric coefficients this floodgate extremely insulating layer are over 15 below 30.
[claim6]
6. According to claim 1, to 5 items of any item of thin film transistors, level of thickness this channel is below 5nm above 80nm.
[claim7]
7. According to claim 1, to 6 items of any item of thin film transistors, this channel for this 1st oxide, and in X-ray photoelectron optical spectroscopy (X-ray Photoelectron Spectroscopy) in analysis, when this channel contains the total of oxygen atom is 1:00, is attributed to below 531eV above 532eV the scope oxygen atom of number within wave ridge is over 0.19 below 0.21.
[claim8]
8. Manufacture of method 8.1 thin film transistors, is Yu Zhaji the electrode level forms the process with forming the channel (may among inevitable impurity) the channel form the processes to contain the floodgate insulating layer to form the process with the oxide extremely, this floodgate insulating layer forms the process is extremely taking takes the floodgate of insulating layer outset material to heat up with the forerunner body level in the ether ring boundary atmosphere including the forerunner of body as well as including the forerunner of body zirconium (Zr) as the forerunner of body solution solute floodgate insulating layer with the forerunner body solution lanthanum (La) extremely extremely, taking advantage of this causes by lanthanum (La) and zirconium (Zr) the oxide of constitution (may contain inevitable impurity) the floodgate extremely insulating layer by the sumWay of floodgate electrode level docking forms extremely; This channel forms the process is: Takes including forerunner of body and including forerunner of body zinc (Zn) indium (In), as well as includes, when this indium (In) for one becomes over atomicity of ratio 0.015 below 0.075 forerunner of body zirconium (Zr) for 1st of the forerunner body solution solutes; Perhaps takes including the forerunner of body indium (In), as well as includes, when this indium (In) for one becomes over atomicity of ratio 0.055 below 0.16 forerunner of body zirconium (Zr) for 2nd the forerunner body solution solute; Perhaps takes including the forerunner of body indium (In), as well as includes, when this indium (In) for one becomes over the atomicity of 0.055 below 0.16 compared to the forerunner of body lanthanum (La) the forerunner body solution takes the channel of outset material to heat up with the forerunner body level in the ether ring boundary atmosphere for solute 3rd, takes advantage of this formation: Includes indium (In) and zinc (Zn), and includes, when this indium (In) is one becomes over the atomicity of 0.015 below 0.075 compared to 1st of the oxide zirconium (Zr) (may including inevitable impurity) the channel uses the oxide; Perhaps includes indium (In), and includes, when this indium (In) is one becomes over the atomicity of 0.055 below 0.16 compared to 2nd the oxide zirconium (Zr) (may including inevitable impurity) the channel uses the oxide; Perhaps includes indium (In), and includes, when this indium (In) is one becomes over the atomicity of 0.055 below 0.16 compared to 3rd the oxide lanthanum (La) (may including inevitable impurity) the channel uses the oxide.
[claim9]
9. Like manufacture of method application patent scope 8th item of thin film transistor, with taking forming of heating temperature this floodgate extremely insulating layer as over 350℃ below 550℃; With taking forming of heating temperature this channel as over 350℃ below 550℃.
[claim10]
10. Like manufacture of method application patent scope 8th item of thin film transistor, this channel uses the oxide for the 1st oxide and for noncrystal.
[claim11]
11. Like manufacture of method application patent scope 8th item of thin film transistor, this channel uses the oxide for the 2nd oxide and for noncrystal.
[claim12]
12. Like manufacture of method application patent scope 8th item of thin film transistor, this channel uses the oxide for the 3rd oxide and for noncrystal.
[claim13]
13. According to claim 8, to manufacture of method 12 items of any item of thin film transistors, forms the process department to further contain the embossing process in this floodgate insulating layer extremely, this embossing process is before forming this floodgate extremely insulating layer, was being heated up with the forerunner body level in the ether ring boundary atmosphere this floodgate insulating layer extremely to over the condition of 80℃ below 300℃ under executes the embossing processing, so as to forms the embossing structure with the forerunner body level to this floodgate insulating layer extremely.
[claim14]
14. According to claim 8, to manufacture of method 13 items of any item of thin film transistors, forms the process department to further contain the embossing process in this channel, this embossing process is before forming this channel, was being heated up with the forerunner body level in the ether ring boundary atmosphere this channel to over the condition of 80℃ below 300℃ under executes the embossing processing, so as to forms the embossing structure with the forerunner body level to this channel.
[claim15]
15. 1 kinds of thin film transistors, are Yu Zhaji between the electrode and channel have by lanthanum (La) and zirconium (Zr) the oxide of constitution (may contain inevitable impurity) the floodgate extremely insulating layer; This channel is 4th the oxide constitution (may, perhaps 5th the oxide constitution (may contain inevitable impurity) including inevitable impurity) by indium (In) and zinc (Zn) by indium (In) and zinc (Zn) and tin (Sn).
[claim16]
16. According to claim 15, item of thin film transistor, works as this 4th oxide the atomicity of this indium is 1 situation, this zinc (Zn) atomicity is over 0.15 below 0.75; And works as the atomicity of this indium is 1 situation, the atomicity of this tin (Sn) is over 0.5 below 2.
[claim17]
17. Manufacture of method 17.1 thin film transistors, is Yu Zhaji the electrode level forms the process with forming the channel (may among inevitable impurity) the channel form the processes to contain the floodgate insulating layer to form the process with the oxide extremely, this floodgate insulating layer forms the process is extremely taking takes the floodgate of insulating layer outset material to heat up with the forerunner body level in the ether ring boundary atmosphere including the forerunner of body as well as including the forerunner of body zirconium (Zr) as the forerunner of body solution solute floodgate insulating layer with the forerunner body solution lanthanum (La) extremely extremely, taking advantage of this causes by lanthanum (La) and zirconium (Zr) the oxide of constitution (may contain inevitable impurity) the floodgate extremely insulating layer by the sumWay of floodgate electrode level docking forms extremely; This channel forms the process is taking, as well as the forerunner of body bed metal ore (Sn) the forerunner body solution, perhaps takes as solute 4th including the forerunner of body and including the forerunner of body zinc (Zn) indium (In) including the forerunner of body indium (In), as well as the forerunner body solution takes the channel of outset material to heat up as solute 5th with the forerunner body level in the ether ring boundary atmosphere including the forerunner of body zinc (Zn), takes advantage of this to form by indium (In) and zinc (Zn) and tin (Sn) 4th the oxide constitution channel, perhaps 5th the oxide constitution channel uses by indium (In) and zinc (Zn) with the oxide the oxide.
[claim18]
18. Like manufacture of method application patent scope 17th item of thin film transistor, works as this 4th oxide the atomicity of this indium is 1 situation, the atomicity of this zinc (Zn) is over 0.15 below 0.75, and works as the atomicity of this indium is 1 situation, the atomicity of this tin (Sn) is over 0.5 below 2.
[claim19]
19. According to claim 17, or manufacture of method 18 items of thin film transistors, with taking forming of heating temperature this floodgate extremely insulating layer as over 350℃ below 440℃; With taking forming of heating temperature this channel as over 350℃ below 440℃.
[claim20]
20. According to claim 17, to manufacture of method 19 items of any item of thin film transistors, this floodgate electrode level forms the process department to further contain the embossing process extremely, this embossing process will be taking including the forerunner of body as well as takes the floodgate of extremely electrode outset material as the forerunner of body solution solute floodgate electrode bismuth (Bi) with the forerunner body solution including the forerunner of body ruthenium (Ru), perhaps takes extremely with the forerunner body level including the forerunner of body, as well as uses the forerunner body solution achievement including the forerunner of body ruthenium (Ru) as the forerunner of body solution solute floodgate electrode including the forerunner of body bismuth (Bi) lanthanum (La) extremelyThe floodgate of electrode outset material the heating in the ether ring boundary atmosphere is formed with the forerunner body level extremely by this bismuth (Bi) with this ruthenium (Ru) the oxide of constitution floodgate electrode with the oxide (may including inevitable impurity) the floodgate electrode with the oxide (be possible extremely extremely including inevitable impurity), perhaps by this lanthanum (La) and this bismuth (Bi), as well as this ruthenium (Ru) the oxide of constitution floodgate extremely electrode before the oxide (may contain inevitable impurity), this floodgate extremely electrode with the forerunner body level in the ether ring boundary atmosphere, in the heating to over 80℃ below 300℃ condition under executes the embossing processing, so as toForms the embossing structure with the forerunner body level to this floodgate electrode extremely.
[claim21]
21. According to claim 17, to manufacture of method 20 items of any item of thin film transistors, this floodgate insulating layer forms the process department to further contain the embossing process extremely, this embossing process is before forming this floodgate extremely insulating layer, executes the embossing processing with the forerunner body level in over the ether ring boundary atmosphere, in the heating to 80℃ below 300℃ condition of under this floodgate extremely insulating layer, by forms the embossing structure with the forerunner body level to this floodgate insulating layer extremely.
[claim22]
22. According to claim 17, to manufacture of method 21 items of any item of thin film transistors, this channel forms the process department to further contain the embossing process, this embossing process is before forming this channel, executes the embossing processing with the forerunner body level in the ether ring boundary atmosphere, in the heating to over 80℃ below 300℃ condition under this channel, by forms the embossing structure with the forerunner body level to this channel.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA TATSUYA
  • INOUE SATOSHI
  • LI JIN-WANG
  • MIYASAKO TAKAAKI
  • PHAN TRONG TUE
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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