TOP > 外国特許検索 > Raman scattering light amplification device, method for producing raman scattering light amplification device, and raman laser light source using the raman scattering light amplification device

Raman scattering light amplification device, method for producing raman scattering light amplification device, and raman laser light source using the raman scattering light amplification device

外国特許コード F140007927
整理番号 K03110TW
掲載日 2014年8月18日
出願国 台湾
出願番号 102108274
公報番号 201409147
公報番号 I619997
出願日 平成25年3月8日(2013.3.8)
公報発行日 平成26年3月1日(2014.3.1)
公報発行日 平成30年4月1日(2018.4.1)
優先権データ
  • 特願2012-185638 (2012.8.24) JP
発明の名称 (英語) Raman scattering light amplification device, method for producing raman scattering light amplification device, and raman laser light source using the raman scattering light amplification device
発明の概要(英語) (TWI619997)
A Raman scattering light amplification device is provided.
The device includes a waveguide formed in a photonic crystal (20) on a semiconductor substrate, in which air holes (20a) are formed.
The waveguide has resonant modes with incident light at multiple frequencies.
Frequency difference between one frequency and another frequency of the multiple frequencies equals to the Raman shift frequency in the semiconductor substrate.
The waveguide is formed along the direction with respect to the crystal plane orientation of the semiconductor substrate such that the Raman transition probability expressed by electromagnetic fields of the two resonant modes and Raman tensors of the semiconductor substrate are maximized.
特許請求の範囲(英語) [claim1]
1. Kinds of Laman diffused light enhancement installments, are in the air gate forms in the photonic crystal on semiconductor foundation plate, has resonating pattern the Laman of diffused light enhancement installment of guided waves road under a plural number frequency regarding the incident light, its characteristic lies in: The above guided waves road crystallizes the position surface formation direction to establish in the above semiconductor foundation plate: A resonating pattern is equal to the Laman displacement frequency of above semiconductor foundation plate with other resonating patterns' frequency differences, and Laman who expressed by above two resonating patterns' the Laman tensor of electromagnetic field distributed and above semiconductor foundation plate jumps the probability to become in a big way.
[claim2]
2. According to claim 1, Laman diffused light enhancement installment, above two resonating patterns for basis guided waves pattern and first stimulation guided waves pattern.
[claim3]
3. According to claim 2, Laman diffused light enhancement installment, the above semiconductor foundation plate is the silicon, and above guided waves road crystallizes the position surface formation direction in the above semiconductor foundation plate for the above silicon crystallization position (100) direction or and this equivalent surface position.
[claim4]
4. According to claim 1, Laman diffused light enhancement installment, by forming above photonic crystal the above guided waves road on of striation flaw constitution to have up the resonator, this light resonator has to cause the surrounding photonic crystal structure change a pair of light reflecting surface, so that staggers the light emission wave length in this guided waves road's midway the band of light.
[claim5]
5. According to claim 4, Laman diffused light enhancement installment, the above pair of light reflecting surface is reflects with light of both sides first stimulation guided waves pattern the light of basis guided waves pattern.
[claim6]
6. 1 kinds of Laman laser photo sources, its characteristic lies in has: If applied for the patent scope 5th Laman diffused light enhancement installment; And the stimulation smooth source of light of output above first stimulation guided waves pattern; Above stimulation smooth source output the light of first stimulation guided waves pattern was input to the above Laman diffused light enhancement installment the above light resonator.
[claim7]
7. According to claim 6, Laman laser photo source, above stimulation smooth source for laser photo source.
[claim8]
8. According to claim 6, Laman laser photo source, above stimulation smooth source for illumination diode.
[claim9]
9. According to claim 7, or 8 Laman laser photo sources, the above stimulation smooth source forms on forming the above photonic crystal above semiconductor foundation plate.
[claim10]
10. 1 manufacture of method Laman diffused light enhancement installments, is in the air gate forms in the photonic crystal on semiconductor foundation plate, has the resonating pattern manufacture of method Laman of diffused light enhancement installment guided waves road under a plural number frequency regarding the incident light, its characteristic lies in has the following stage: Establish the air gate's of above photonic crystal size or the disposition: Causes a resonating pattern to be equal to the Laman displacement frequency of above semiconductor foundation plate with other resonating patterns frequency differences; And crystallizes the position surface formation direction to establish in the above semiconductor foundation plate the above guided waves road: Jumps the probability to become in a big way by Laman who above two resonating patterns' the Laman tensor of electromagnetic field distributed and above semiconductor foundation plate expressed.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TAKAHASHI YASUSHI
  • INUI YOSHITAKA
  • ASANO TAKASHI
  • NODA SUSUMU
  • CHIHARA MASAHIRO
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Materials and processes for innovative next-generation devices AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close