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Memory circuit provided with bistable circuit and non-volatile element

Foreign code F140007930
File No. AF15-02TW
Posted date Aug 18, 2014
Country Taiwan
Application number 102117352
Gazette No. 201403596
Gazette No. I508063
Date of filing May 16, 2013
Gazette Date Jan 16, 2014
Gazette Date Nov 11, 2015
Priority data
  • P2012-114989 (May 18, 2012) JP
Title Memory circuit provided with bistable circuit and non-volatile element
Abstract A memory circuit is provided with: a bistable circuit for memorizing data; non-volatile elements in which the data memorized in the bistable circuit is stored in a non-volatile manner, and that restores the data stored in non-volatile manner in the bistable circuit; and a control unit.
When a period in which no reading or writing of data from the bistable circuit takes place is longer than a predetermined period, the control unit stores the data memorized in the bistable circuit in a non-volatile manner, and shuts down power supply to the bistable circuit.
When the period in which no reading or writing of data takes place is shorter than the predetermined period, the control unit makes a power supply voltage to the bistable circuit lower than a voltage for a period in which reading or writing of data from the bistable circuit takes place, without performing the non-volatile storing of the data memorized in the bistable circuit.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHUTO YUSUKE
  • YAMAMOTO SHUICHIRO
  • SUGAHARA SATOSHI
IPC(International Patent Classification)
Reference ( R and D project ) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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