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ELECTRONIC ELEMENT

Foreign code F150008155
File No. AF12-16WO
Posted date Mar 17, 2015
Country WIPO
International application number 2014JP056080
International publication number WO 2014142040
Date of international filing Mar 9, 2014
Date of international publication Sep 18, 2014
Priority data
  • P2013-047422 (Mar 9, 2013) JP
Title ELECTRONIC ELEMENT
Abstract Provided is an electronic element that functions as a switch or memory even if a metal nanoparticle is not used. The electronic element is provided with an electrode (5A) and another electrode (5B) that are arranged so as to have a nanogap therebetween and a halogen ion (6) that is provided between the electrode (5A) and the other electrode (5B) on at least one of the electrodes. When voltage between the electrode (5A) and the other electrode (5B) is continuously and repeatedly varied from a positive value to a negative value and from a negative value to a positive value, the waveform of electrical current flowing between the electrode (5A) and the other electrode (5B) is asymmetrical. The state of the halogen ion (6) is varied in accordance with the value of the voltage that is applied between the electrode (5A) and the other electrode (5B) so that an information writing state and an information erasing state are maintained in accordance with the value of the electrical current that flows between the electrode (5A) and the other electrode (5B).
Outline of related art and contending technology BACKGROUND ART
A bridge between the opposing electrodes, a thin line, the electronic device formed with the contact point has been developed (for example Patent Document 1). On the other hand, the inventors of the present invention, the single-electron transistor to establish a technique of manufacturing, the single-electron device as Coulomb island should be noted that the gold nanoparticles, the particle size of 1.8 nm using the STM of the coulomb island at room temperature the gold nanoparticles function as has been revealed. In addition, the construction of the solid substrate to the electronic device, the gap length of 5 nm using an electroless plating method has a high yield nano-gap electrode at one time has been established a technology for manufacturing. Further, between the nanogap electrodes, gold nanoparticles protected alkanethiol molecule chemical adsorption method introduced by the operation of the single electron transistors have been reported (Non-Patent Document 1 to 5).
Scope of claims (In Japanese)請求の範囲 [請求項1]
 ナノギャップを有するように配置された一方の電極及び他方の電極と、
 上記一方の電極と上記他方の電極との間で少なくとも何れかの電極上に設けられたハロゲンイオンと、
を備える、電子素子。

[請求項2]
 前記一方の電極と前記他方の電極との間に電圧を正の値から負の値まで及び/又は負の値から正の値まで連続的に変化させると、前記一方の電極と前記他方の電極との間に流れる電流波形が非対称となる、請求項1に記載の電子素子。

[請求項3]
 前記一方の電極と前記他方の電極との間の電圧に対する電流特性が負性微分コンダクタンスを有する、請求項1に記載の電子素子。

[請求項4]
 前記一方の電極と前記他方の電極との間に印加する電圧の値に応じて前記ハロゲンイオンの状態を変化させ、前記一方の電極と前記他方の電極との間に流れる電流の値に対応させて情報の書き込み状態と情報の消去状態とを維持する、請求項1に記載の電子素子。

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MAJIMA Yutaka
  • TERANISHI Toshiharu
  • AZUMA Yasuo
  • SAKAMOTO Masanori
  • KANO Shinya
  • Daniel Eduardo HURTADO SALINAS
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG
Reference ( R and D project ) CREST Establishment of Innovative Manufacturing Technology Based on Nanoscience AREA
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