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Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated

Foreign code F150008516
File No. AF15-08TW
Posted date Nov 19, 2015
Country Taiwan
Application number 103136023
Gazette No. 201528384
Gazette No. I591731
Date of filing Oct 17, 2014
Gazette Date Jul 16, 2015
Gazette Date Jul 11, 2017
Priority data
  • P2013-227559 (Oct 31, 2013) JP
Title Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated
Abstract (TWI591731)
A semiconductor-substrate manufacturing method that includes a step in which a germanium layer having an oxygen concentration of at least 1x1016 cm-3 is heat-treated at a temperature of at least 700 DEG C in a reductive gas atmosphere.
Also, a semiconductor-substrate manufacturing method that includes a step in which a germanium layer having an oxygen concentration of at least 1x1016 cm-3 is heat-treated in a reductive gas atmosphere such that said oxygen concentration decreases.
Scope of claims [claim1]
1.1 semiconductor foundation plates, its characteristic lies in contains to have the following step: In the reducible gas environment, will have 1×10 oxygen concentration of 16 cm over -3 germanium level to carry on the heat treatment over 700℃.
Manufacture of method 2.1 semiconductor foundation plates, its characteristic lies in contains to have the following step: In the reducible gas environment, will have 1×10 oxygen concentration of 16 cm over -3 germanium level to carry on the heat treatment, to reduce the above oxygen concentration.
[claim2]
3. Like manufacture of method request item of 1 semiconductor foundation plate, above carries on the heat treatment step to carry on heat treatment over 800℃ the step.
[claim3]
4. Like request item 1 to manufacture of method threes any item of semiconductor foundation plate, the oxygen concentration that the above germanium level has will become because of the above heat treatment will be lower than 1×10 16 cm -3.
[claim4]
5. Like request item 1 to manufacture of method fours any item of semiconductor foundation plate, above germanium level's (111) is the main surface.
[claim5]
6. Like request item 1 to manufacture of method five any item of semiconductor foundation plate, the above reducible gas environment is the hydrogen environment.
[claim6]
7. Like request item 1 to manufacture of method six any item of semiconductor foundation plate, the above germanium level is the unit crystal germanium foundation plate.
[claim7]
8. Manufacture of method 8.1 semiconductor devices, its characteristic lies in contains to have the following step: In 1 to the manufacture of method seven any item of semiconductor foundation plate generates the semiconductor foundation plate to form the semiconductor device because of like the request item.
[claim8]
9. Like manufacture of method request 8 semiconductor devices, above forms semiconductor device the step to contain to have: Forms floodgate extremely insulation membrane in already the above heat treatment's above germanium level surface the step; And forms the step of floodgate extremely electrode on the above floodgate insulation membrane extremely.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • TORIUMI AKIRA
  • LEE CHOONG-HYUN
  • NISHIMURA TOMONORI
IPC(International Patent Classification)
Reference ( R and D project ) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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