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CHARGE MODULATION ELEMENT AND SOLID-STATE IMAGING DEVICE

外国特許コード F150008576
整理番号 (S2014-0467-N0)
掲載日 2015年11月26日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2015JP000559
国際公開番号 WO 2015118884
国際出願日 平成27年2月6日(2015.2.6)
国際公開日 平成27年8月13日(2015.8.13)
優先権データ
  • 特願2014-022516 (2014.2.7) JP
発明の名称 (英語) CHARGE MODULATION ELEMENT AND SOLID-STATE IMAGING DEVICE
発明の概要(英語) Provided are: a charge modulation element which makes it easy to keep an electric field constant across a long charge-transfer-path distance, and makes it possible to avoid problems caused by interface defects or the like; and a solid-state imaging device. The charge modulation element is equipped with: a first charge-storage region (61), a second charge-storage region (62), a third charge-storage region (63), and a fourth charge-storage region (64) which are provided in symmetrical positions relative to the center position of a light-receiving region; and a first electric-field-control electrode pair (41a, 41b), a second electric-field-control electrode pair (42a, 42b), a third electric-field-control electrode pair (43a, 43b), and a fourth electric-field-control electrode pair (44a, 44b) which change the depletion potential of the charge transfer path, and are positioned on both sides of the charge transfer path leading from the center position of the light-receiving region to each of the first charge-storage region (61), the second charge-storage region (62), the third charge-storage region (63), and the fourth charge-storage region (64).
従来技術、競合技術の概要(英語) BACKGROUND ART
A distance image using time of flight of light time-of-flight (TOF type) light to obtain a distance sensor, the potential of the MOS structure is used directly below the gate electrodes in the longitudinal direction (vertical direction) is controlled. For example, p-n-type semiconductor layer is embedded in the top of the buried region and the charge generation layer, charge transport buried region, the electric charge readout buried region, the top of these the insulation film, is disposed on the insulating film, the signal charge transfer to the buried region and the charge transport layer and the gate electrode, is disposed on the insulating film, the electric charge readout signal charge transferred to the buried region in a structure including a readout gate electrode, in the buried region and the charge generator, receiving the light pulse, the charge generating region with a semiconductor layer immediately below the optical signal is converted into a signal charge, the charge transfer region with a distribution ratio of the electric charges accumulated in the distance to the object from the measured TOF distance measuring device or a CMOS type image sensor using the same have been proposed (see Patent Document 1.).
These CMOS-TOF using this distance measurement element or in the image sensor, the interface defect directly under the transfer gate electrode and the interface state and the dark current due to the occurrence of noise may occur. Furthermore, as described in Patent Document 1 in the case of using the transfer gate electrode, it is difficult to control the potential gradient over a long distance, a moving path of charges over a long distance, the electric field is substantially constant, was actually unreasonable to. Therefore, a long charge transfer path distance measuring element or other such modulation element, the carrier is stopped and in the middle of the charge transfer path, and an expected performance becomes difficult to obtain such a problem has occurred.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
  • 発明者(英語)
  • KAWAHITO, Shoji
  • YASUTOMI, Keita
  • HAN, Sangman
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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