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SEMICONDUCTOR DEVICE WHICH USES GERMANIUM LAYER AS CHANNEL REGION AND METHOD FOR MANUFACTURING SAME

Foreign code F160008796
File No. (AF15P013)
Posted date Aug 4, 2016
Country WIPO
International application number 2015JP080954
International publication number WO 2016072398
Date of international filing Nov 2, 2015
Date of international publication May 12, 2016
Priority data
  • P2014-225622 (Nov 5, 2014) JP
Title SEMICONDUCTOR DEVICE WHICH USES GERMANIUM LAYER AS CHANNEL REGION AND METHOD FOR MANUFACTURING SAME
Abstract A semiconductor device which is provided with: a channel region 50 which is formed within a germanium layer 30 and has a first conductivity type; and a source region 36 and a drain region 38, which are formed within the germanium layer and have a second conductivity type that is different from the first conductivity type. This semiconductor device is configured such that the oxygen concentration in the channel region is lower than the oxygen concentration in a junction interface 52 between the source region and/or the drain region and a region that has the first conductivity type and surrounds the source region and/or the drain region.
Scope of claims [claim1]
1.  A channel region having a first conductivity type formed on the germanium layer,  Is formed on the germanium layer, a source region and a drain region having a second conductivity type different from the first conductivity type, It comprises a,  The oxygen concentration in the channel region is a semiconductor which is characterized in that less than the oxygen concentration at the junction interface between the source region and the drain region of at least one region and the region having the first conductivity type surrounding the at least one region apparatus.
[2]
[claim2]
2.  The oxygen concentration in the channel region is a 1 × 10 <16> cm <-3> or less, claim 1 oxygen concentration in the joint interface is characterized by 1 × 10 <16> higher than the cm <-3> the semiconductor device according.
[3]
[claim3]
3.  Oxygen concentration 5 × 10 <15> cm <-3> semiconductor device according to claim 2, wherein the less is in the channel region.
[4]
[claim4]
4.  The first conductivity type is p-type, semiconductor device as claimed in any one of claims 1 to 3, characterized in that said second conductivity type is n-type.
[5]
[claim5]
5.  Forming a channel region having a first conductivity type formed on the germanium layer,  Forming a source region and a drain region having a second conductivity type different from the first conductivity type in the germanium layer,  Setting the oxygen concentration to be lower than the oxygen concentration at the junction interface between the region having the first conductivity type surrounding the at least one region with said at least one region of the oxygen concentration in the channel region is the source region and the drain region a step of, Method of manufacturing a semiconductor device which comprises a.
[6]
[claim6]
6.  Step of setting the oxygen concentration,  And characterized in that it comprises a step of heat treating the exposed channel region with a region, the germanium layer in a reducing atmosphere in a state where the surface of the germanium layer on regions serving as the bonding interface is not exposed on the germanium layer method of manufacturing a semiconductor device according to claim 5.
[7]
[claim7]
7.  The step of the heat treatment, the semiconductor device according to claim 6, wherein the channel region and the oxygen concentration of the bonding interface is a step of heat treating the 1 × 10 <16> cm <-3> or more germanium layer method of manufacturing.
[8]
[claim8]
8.  Before the step of the heat treatment, a method of manufacturing a semiconductor device according to claim 6 or 7, wherein further comprising the step of introducing oxygen in a region to be a region and the bonding interface serving as the channel region.
[9]
[claim9]
9.  Step of setting the oxygen concentration,  Method of manufacturing a semiconductor device according to claim 5, characterized in that it comprises a step of selectively introducing oxygen into a region serving as the bonding interface with respect to the region to be the channel region.
[10]
[claim10]
10.  Step of setting the oxygen concentration,  The oxygen concentration in the channel region becomes 1 × 10 <16> cm <-3> or less, the oxygen concentration in the joint interface to set the oxygen concentration to be higher than <-3> 1 × 10 <16> cm method of manufacturing a semiconductor device according to any one of claims 5, wherein 9 to be a step.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • TORIUMI AKIRA
  • LEE CHOONG-HYUN
  • NISHIMURA TOMONORI
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Reference ( R and D project ) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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