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SEMICONDUCTOR DEVICE meetings

Foreign code F160008840
File No. (S2015-0371-N0)
Posted date Aug 18, 2016
Country WIPO
International application number 2016JP050206
International publication number WO 2016111306
Date of international filing Jan 6, 2016
Date of international publication Jul 14, 2016
Priority data
  • P2015-002769 (Jan 9, 2015) JP
Title SEMICONDUCTOR DEVICE meetings
Abstract This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by electrolysis of water, the crystal structure of the active layer is changed between a ferromagnetic metal and an antiferromagnetic insulating body.
Scope of claims [claim1]
1. The active layer which consists of the magnetic material of oxide and,
The porous dielectric which was provided with respect to the said active layer, contains the water and, implication,
The semiconductor device which features that it changes the crystalline structure of the said active layer with the ferromagnetic metal and the antiferromagnetism insulator making use of hydrogen and the oxygen which were formed with electrolysis of the said water.
[claim2]
2. Baseplate and,
The active layer which was provided on the said baseplate, consists of the magnetic material of oxide and,
Putting the said active layer on the said baseplate, the source electrode and the drain electrode which are arranged and,
The porous dielectric which was provided with respect to the said active layer, contains the water and,
The gate electrode which is provided on the said porous dielectric and, implication,
Impressing voltage in the said gate electrode, the semiconductor device which features that it changes the crystalline structure of the said active layer with the ferromagnetic metal and the antiferromagnetism insulator making use of hydrogen and the oxygen which electrolyzed said water, were formed.
[claim3]
3. As for the above-mentioned active layer, with the ferromagnetic metal and the antiferromagnetism insulator, the claim in either 1 which features that oxygen content ratio changes or 2 the semiconductor device of statement.
[claim4]
4. The claim in either 1 which features that the above-mentioned ferromagnetic metal SrCoO3 of perovskite structure, as for the above-mentioned antiferromagnetism insulator, SrCoO2.5 of Brown Mira light/write type structure or 2 the semiconductor device of statement.
[claim5]
5. As for the above-mentioned active layer, ABOx (A: Ca, Sr, Ba and B: Co, Mn, Cr, Fe, Ni and 2.0<=x3.5) with the claim in either 1 which features that it consists of the oxide which is displayed or 2 the semiconductor device of statement.
[claim6]
6. As for the above-mentioned porous dielectric, 12CaO 7Al 2 O 3, CaO and Al 2 O 3, 12SrO 7Al 2 O 3, Y 2 O 3, HfO 2, SiO 2, MgO and NaTaO 3, KTaO 3, LaAlO 3, ZrO 2, MgAl 2 O 4, Nb 2 O 5, Ta 2 O 5, Si 3 N 4, SrTiO 3,BaTiO 3, CaTiO 3, SrZrO 3, CaZrO 3 BaZrO 3, and the claim in either 1 which features that at least one which is selected from the group which consists of the zeolite material is included or 2 the semiconductor device of statement.
[claim7]
7. As for the above-mentioned porous dielectric, hole ratio the 5-70 volume % with, moisture content ratio the 23-100 volume % the claim in either 1 which features that it consists of the porous dielectric or 2 the semiconductor device of statement.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • HOKKAIDO UNIVERSITY
  • Inventor
  • OHTA HIROMICHI
  • KATASE TAKAYOSHI
  • SUZUKI YUKI
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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