TOP > 外国特許検索 > LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE

LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE UPDATE

外国特許コード F160008913
整理番号 (S2015-0843-N0)
掲載日 2016年12月6日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP001869
国際公開番号 WO 2016157910
国際出願日 平成28年3月31日(2016.3.31)
国際公開日 平成28年10月6日(2016.10.6)
優先権データ
  • 特願2015-073097 (2015.3.31) JP
発明の名称 (英語) LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE UPDATE
発明の概要(英語) The objective of the present invention is to provide a length measuring element which has a large light receiving surface area and which is advantageous for performing high-speed modulation with a high sensitivity and a low dark current, and a solid-state image capturing device employing said length measuring element. This length measuring element is provided with: an n-type surface embedded region (25) which is disposed selectively in an upper portion of a pixel-forming layer (22) in such a way as to form a photodiode, and which extends in the upper portion of the pixel-forming layer (22) from a light receiving portion to a position in which light is shielded by a light-shielding plate (51); n-type charge accumulating regions (24b, 24d, 24c) having a higher impurity concentration than the surface embedded region (25); a plurality of transfer gate electrodes (42, 44, 43) disposed adjacent to the charge accumulating regions; and an n-type guide region (26a), one end portion of which is disposed toward the bottom of an opening portion of the light-shielding plate (51), and the other end portion of which reaches portions of the transfer gate electrodes, and which has a higher impurity concentration than the surface embedded region (25) and a lower impurity concentration than the charge accumulating regions.
従来技術、競合技術の概要(英語) BACKGROUND ART
Time-of-flight range image sensor using a semiconductor of the active research and development are performed. For the implementation of the distance image sensor, carriers generated in the photodiode, a plurality of light source in synchronization with the transfer in the charge accumulation unit , in order to speed up the charge transfer operation, and reduce the size of the lock-in element of the unit, which are arranged in an array, a method of parallel connection (see Patent Document 1.).
Patent Document 1 described in the present invention, the plurality of transfer gates connected in parallel with the load capacity is increased, the number of pixels further pixels of the image sensor and the power consumption increases as a whole. In addition, the lock-in device connecting a plurality of the unit, the signal detection portion of the diffusion layer of the large area, which becomes a cause of the dark current.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
  • 発明者(英語)
  • KAWAHITO, Shoji
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
ライセンスをご希望の方、特許の内容に興味を持たれた方は、下記までご連絡ください。

PAGE TOP

close
close
close
close
close
close