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THIN-FILM SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, DEPOSITION APPARATUS, DEPOSITION METHOD AND GaN TEMPLATE コモンズ

外国特許コード F170008925
掲載日 2017年1月19日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP000895
国際公開番号 WO 2016132746
国際出願日 平成28年2月19日(2016.2.19)
国際公開日 平成28年8月25日(2016.8.25)
優先権データ
  • 特願2015-031708 (2015.2.20) JP
発明の名称 (英語) THIN-FILM SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, DEPOSITION APPARATUS, DEPOSITION METHOD AND GaN TEMPLATE コモンズ
発明の概要(英語) The purpose of the present invention is to provide a thin-film substrate in which a hexagonal crystal buffer layer is formed on a cubic crystal substrate, a semiconductor device, a manufacturing method therefor, a deposition apparatus, a deposition method and a GaN template. This deposition method is a method that deposits a hexagonal crystal thin-film on a cubic crystal substrate. A substrate (110) is a cubic crystal Si (001) substrate. The substrate (110) is disposed on a susceptor (1200) in a chamber (1100). A target (1500) is disposed at a position that is inclined within a range of 10° to 60° with respect to a direction perpendicular to the plate surface of the substrate (110). A hexagonal crystal buffer layer (120) is deposited on the cubic crystal substrate (110) by sputtering without rotating the substrate (110) with respect to the chamber (1100).
従来技術、競合技術の概要(英語) BACKGROUND ART
Group III nitride semiconductor represented by GaN is, the higher the intensity of breakdown electric field, and a high melting point. Therefore, Group III nitride semiconductor, instead of the GaAs-based semiconductor, high power, high frequency, for high temperatures as the material of the semiconductor device have been expected. Therefore, the group III element such as a HEMT using a nitride semiconductor has been investigated and developed. In addition, the Group III nitride semiconductor, are also applied to the light emitting element.
Group III nitride semiconductor, typified by a wurtzite hexagonal crystal structure. Therefore, as a growth substrate, a hexagonal substrate is generally used. Such as hexagonal, for example, a sapphire substrate may be cited. Also, as in Patent Document 1, as a growth substrate, may be used in the Si (111) substrate. The Si (111) substrate, has a structure similar to hexagonal. For the Si substrate, a substrate with a large diameter can be manufactured in a high quality at low cost. Therefore, a Group III nitride semiconductor on the Si substrate to grow commercial significance.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
  • 発明者(英語)
  • AMANO HIROSHI
  • HONDA YOSHIO
  • MITSUNARI TADASHI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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