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INVERSE PHOTOELECTRON SPECTROSCOPY DEVICE 新技術説明会

外国特許コード F170008958
整理番号 K03903WO
掲載日 2017年3月9日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2015JP065197
国際公開番号 WO 2015182641
国際出願日 平成27年5月27日(2015.5.27)
国際公開日 平成27年12月3日(2015.12.3)
優先権データ
  • 特願2014-111515 (2014.5.29) JP
発明の名称 (英語) INVERSE PHOTOELECTRON SPECTROSCOPY DEVICE 新技術説明会
発明の概要(英語) An inverse photoelectron spectroscopy device (1) radiates an electron beam at low energy to a sample (40) and detects light generated when electrons in the sample relax to an unoccupied level. The inverse photoelectron spectroscopy device (1) is provided with an electron generating part (10) for generating electrons radiated to the sample (40), a wavelength selecting part (90) for selecting light having a specific wavelength from light generated by the sample (40), a photodetector (100) for detecting the light selected by the wavelength selecting part (90), and a condensing optical system (80) disposed between the sample (40) and the photodetector (100). The electron generating part (10) includes yttrium oxide as a thermionic emission material.
従来技術、競合技術の概要(英語) BACKGROUND ART
The current, the organic thin film transistor (OFET) and an organic thin film solar cells, for a device using an organic semiconductor has been intensively studied. The development of organic semiconductor devices, and the valence level, air level or conduction level (the lowest energy in the electron affinity, such as density of states) is essential for accurate measurement. Has a valence band or the valence level, the sample is irradiated with light, to measure the energy of the electrons released can be measured by photoelectron spectroscopy. On the other hand, the empty level or as a method for measuring the conduction band, backlit electron spectroscopy (Inverse Photoemission Spectroscopy: IPES) has been known.
Backlit electronic spectroscopy, an electron beam having uniform energy directed to the sample, the electrons relaxed to the level in the sample the air generated when the electron energy spectrum of the light can be measured as a function of, the electron affinity can be obtained.
Conventional, backlit electronic spectroscopy, in order to increase the signal strength of the strong irradiation with an electron beam, vacuum ultraviolet rays generated by an object is detected. However in this case, there are problems as follows. The first to 1, particularly in the case of organic semiconductor sample, damage to the sample by the electron beam (altered) can easily occur. 2 To the first, the vacuum ultraviolet light is absorbed by oxygen, it is necessary to perform the detection in a high vacuum, the structure of the apparatus is complicated. The first to 3, for detecting the vacuum ultraviolet light, a special resolution optical system and the like must be used.
Therefore, Patent Document 1, Non-Patent Document 1 are disclosed in 4 from the backlight to the low energy electron spectroscopy (Low-energy Inverse Photoemission Spectroscopy: LEIPS) is, the covalent bonds of the molecules constituting the specimen at a very low rate of low energy than the energy of the electron beam by irradiating a sample, and to prevent damage of the sample. In addition, the light emitted from the sample is not absorbed by oxygen and near-ultraviolet light, as a result of this detection can be carried out in air. In addition, the detection of the vacuum ultraviolet light cannot be used is a commercially available quartz glass or by using multilayer interference bandpass filter or the like by detecting the light with high sensitivity, high resolution is realized.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • YOSHIDA, Hiroyuki
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) PRESTO Photoenergy conversion systems and materials for the next generation solar cells AREA
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