INVERSE PHOTOELECTRON SPECTROSCOPY DEVICE
|Posted date||Mar 9, 2017|
|International application number||2015JP065197|
|International publication number||WO 2015182641|
|Date of international filing||May 27, 2015|
|Date of international publication||Dec 3, 2015|
|Title||INVERSE PHOTOELECTRON SPECTROSCOPY DEVICE|
|Abstract||An inverse photoelectron spectroscopy device (1) radiates an electron beam at low energy to a sample (40) and detects light generated when electrons in the sample relax to an unoccupied level. The inverse photoelectron spectroscopy device (1) is provided with an electron generating part (10) for generating electrons radiated to the sample (40), a wavelength selecting part (90) for selecting light having a specific wavelength from light generated by the sample (40), a photodetector (100) for detecting the light selected by the wavelength selecting part (90), and a condensing optical system (80) disposed between the sample (40) and the photodetector (100). The electron generating part (10) includes yttrium oxide as a thermionic emission material.|
|Outline of related art and contending technology||
The current, the organic thin film transistor (OFET) and an organic thin film solar cells, for a device using an organic semiconductor has been intensively studied. The development of organic semiconductor devices, and the valence level, air level or conduction level (the lowest energy in the electron affinity, such as density of states) is essential for accurate measurement. Has a valence band or the valence level, the sample is irradiated with light, to measure the energy of the electrons released can be measured by photoelectron spectroscopy. On the other hand, the empty level or as a method for measuring the conduction band, backlit electron spectroscopy (Inverse Photoemission Spectroscopy: IPES) has been known.
Backlit electronic spectroscopy, an electron beam having uniform energy directed to the sample, the electrons relaxed to the level in the sample the air generated when the electron energy spectrum of the light can be measured as a function of, the electron affinity can be obtained.
Conventional, backlit electronic spectroscopy, in order to increase the signal strength of the strong irradiation with an electron beam, vacuum ultraviolet rays generated by an object is detected. However in this case, there are problems as follows. The first to 1, particularly in the case of organic semiconductor sample, damage to the sample by the electron beam (altered) can easily occur. 2 To the first, the vacuum ultraviolet light is absorbed by oxygen, it is necessary to perform the detection in a high vacuum, the structure of the apparatus is complicated. The first to 3, for detecting the vacuum ultraviolet light, a special resolution optical system and the like must be used.
Therefore, Patent Document 1, Non-Patent Document 1 are disclosed in 4 from the backlight to the low energy electron spectroscopy (Low-energy Inverse Photoemission Spectroscopy: LEIPS) is, the covalent bonds of the molecules constituting the specimen at a very low rate of low energy than the energy of the electron beam by irradiating a sample, and to prevent damage of the sample. In addition, the light emitted from the sample is not absorbed by oxygen and near-ultraviolet light, as a result of this detection can be carried out in air. In addition, the detection of the vacuum ultraviolet light cannot be used is a commercially available quartz glass or by using multilayer interference bandpass filter or the like by detecting the light with high sensitivity, high resolution is realized.
|IPC(International Patent Classification)||
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
|Reference ( R and D project )||PRESTO Photoenergy conversion systems and materials for the next generation solar cells AREA|
Contact Information for " INVERSE PHOTOELECTRON SPECTROSCOPY DEVICE "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
- Fax: 81-3-5214-8476