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SKYRMION GENERATION DEVICE, SKYRMION GENERATION METHOD, AND MAGNETIC MEMORY DEVICE

Foreign code F170008972
File No. K20301WO
Posted date Mar 13, 2017
Country WIPO
International application number 2016JP057073
International publication number WO 2016158230
Date of international filing Mar 8, 2016
Date of international publication Oct 6, 2016
Priority data
  • P2015-072079 (Mar 31, 2015) JP
Title SKYRMION GENERATION DEVICE, SKYRMION GENERATION METHOD, AND MAGNETIC MEMORY DEVICE
Abstract Provided is a skyrmion generation method in which the power consumed during generation of skyrmions can be reduced. In this skyrmion generation method, an electric field is locally applied to an insulating magnetic body 12 having a chiral crystal structure using an electric field generator 16 while a magnetic field from a magnetic field generator 14 is applied to the magnetic body 12. Skyrmions are thereby generated inside the magnetic body 12. The magnetic body 12 preferably assumes the form of a thin film having, at least partially, a thickness of 2-300 nm. The magnetic field generator 14 preferably applies the magnetic field to the surface of the magnetic body 12 in a substantially perpendicular direction.
Outline of related art and contending technology BACKGROUND ART
Non-Patent Document 1 is, in the metal magnetic material is a chiral skyrmion, a small current is driven by the disclosed technology. In addition, in Patent Document 1 and Non-Patent Document 1, a strip of a metallic magnetic material is a chiral thin-film sample is provided in the corner (notch), while applying a predetermined magnetic field intensity by passing a current to the sample, the corner portion as a starting point a method of generating skyrmion disclosed.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MOCHIZUKI Masahito
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Reference ( R and D project ) PRESTO Innovative Nano-electronics through Interdisciplinary Collaboration among Material, Device and System Layers AREA
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