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MAGNETORESISTIVE ELEMENT AND STORAGE CIRCUIT UPDATE

外国特許コード F170008975
整理番号 AF15-13WO
掲載日 2017年3月13日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP065964
国際公開番号 WO 2016194886
国際出願日 平成28年5月31日(2016.5.31)
国際公開日 平成28年12月8日(2016.12.8)
優先権データ
  • 特願2015-113515 (2015.6.3) JP
発明の名称 (英語) MAGNETORESISTIVE ELEMENT AND STORAGE CIRCUIT UPDATE
発明の概要(英語) A magnetoresistive element that is provided with: a free layer 10 which is provided with a magnetostrictive layer 11 containing a magnetostrictive material; a pinned layer 18 which is provided with a first ferromagnetic layer 16; a thin film which is arranged between the pinned layer and the free layer; a piezoelectric body 22 which is arranged so as to surround at least a part of the magnetostrictive layer from a direction intersecting with the lamination direction of the free layer and the pinned layer, and which applies a pressure to the magnetostrictive layer; and an electrode 24 which is capable of applying a voltage that is different from the voltage applied to the free layer and the voltage applied to the pinned layer, and which applies a voltage to the piezoelectric body so that the piezoelectric body applies a pressure to the magnetostrictive layer.
従来技術、競合技術の概要(英語) BACKGROUND ART
One of the magnetoresistive element of a magnetic tunnel junction (MTJ: Magnetic tunnel junction) is, non-volatile memory storage element have been studied as MRAM(Magnetoresistive random access memory), development is underway. In addition, the use of the nonvolatile storage (nonvolatile gating: NVPG) power gating of the logic architecture such as low power consumption are also expected to be applied to (Patent Document 1). The MTJ, the magnetization direction of the free layer, whose magnetization direction is fixed and the pinned layer.
Patent Document 2 is shown in Fig. 4, a stacked memory device having a cylindrical shape to the outer surface of the piezoelectric body is provided, a metal film on the outer peripheral surface of the piezoelectric body may be provided are described.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SUGAHARA Satoshi
  • TAKAMURA Yota
  • NAKAGAWA Shigeki
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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