MAGNETORESISTIVE ELEMENT AND STORAGE CIRCUIT
|Posted date||Mar 13, 2017|
|International application number||2016JP065964|
|International publication number||WO 2016194886|
|Date of international filing||May 31, 2016|
|Date of international publication||Dec 8, 2016|
|Title||MAGNETORESISTIVE ELEMENT AND STORAGE CIRCUIT|
|Abstract||A magnetoresistive element that is provided with: a free layer 10 which is provided with a magnetostrictive layer 11 containing a magnetostrictive material; a pinned layer 18 which is provided with a first ferromagnetic layer 16; a thin film which is arranged between the pinned layer and the free layer; a piezoelectric body 22 which is arranged so as to surround at least a part of the magnetostrictive layer from a direction intersecting with the lamination direction of the free layer and the pinned layer, and which applies a pressure to the magnetostrictive layer; and an electrode 24 which is capable of applying a voltage that is different from the voltage applied to the free layer and the voltage applied to the pinned layer, and which applies a voltage to the piezoelectric body so that the piezoelectric body applies a pressure to the magnetostrictive layer.|
|Outline of related art and contending technology||
One of the magnetoresistive element of a magnetic tunnel junction (MTJ: Magnetic tunnel junction) is, non-volatile memory storage element have been studied as MRAM(Magnetoresistive random access memory), development is underway. In addition, the use of the nonvolatile storage (nonvolatile gating: NVPG) power gating of the logic architecture such as low power consumption are also expected to be applied to (Patent Document 1). The MTJ, the magnetization direction of the free layer, whose magnetization direction is fixed and the pinned layer.
Patent Document 2 is shown in Fig. 4, a stacked memory device having a cylindrical shape to the outer surface of the piezoelectric body is provided, a metal film on the outer peripheral surface of the piezoelectric body may be provided are described.
|IPC(International Patent Classification)||
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
|Reference ( R and D project )||CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA|
Contact Information for " MAGNETORESISTIVE ELEMENT AND STORAGE CIRCUIT "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
- Fax: 81-3-5214-8476