Provided is a nanodevice whereby the charge state of metal nanoparticles can be controlled.
The nanodevice comprises: nano-gap electrodes 5 comprising one electrode 5A and another electrode 5B arranged so as to have a nano-sized gap therebetween; a nanoparticle 7 provided between the nano-gap electrodes 5; and a plurality of gate electrodes 9.
At least one of the plurality of gate electrodes 9 is used as a floating gate electrode and controls the charge state of the nanoparticle 7.
As a result, multi-value memory and rewritable logical operation processing are provided.
1. Kinds of nano equipment, have: The nano gap electrode, by having the way disposition of gap of nano size has a side electrode to constitute with another side electrode;
The particle, establishes in this nano gap electrodes;
As well as plural number floodgate extremely electrode;
At least in use plural number this floodgate extremely electrode takes the floating floodgate extremely electrode, controls this particle the electric charge condition.
2. Like nano of equipment request item of 1 record, exerts between this floating floodgate voltage is extremely Ulan Bator vibration peak value condition and valley state of value voltages.
3. Like nano of equipment request item of 1 record, because of will exert in this floating floodgate voltage is extremely divided into a plural number social stratum, but causes between these side electrodes and this another side electrodes mobile the electric current gradually different.
4. Like nano of equipment request item of 3 record, exerts in this floating floodgate voltage is extremely uses Ulan Bator to vibrate the one of gentle incline or steep inclines in characteristic any.
5. Like nano of equipment request item of 1 record, Ulan Bator that with divides one cycle vibrates provides the summit current the floodgate pole tension with providing neighboring summit current the voltage difference of floodgate pole tension .Delta.V gives two division, trisection or the quartern both sides of suitable value after some voltage sector is established as with exerting in plural number this floodgate extremely electrode's the high potential and low electric potential input of suitable potential difference voltage.
6. Like request item 1 to nano of equipment five any institute record, plural number this floodgate electrode configuration by has a same surface side floodgate extremely electrode or the plural number side floodgate electrode with this nano gap electrode extremely constitutes extremely.
7. Like request item 1 to nano of equipment five any institute record, this nano gap electrode substance was covered by the insulating layer with this grain of rice;
Plural number this floodgate extremely electrode configuration is constituted by the side floodgate extremely electrode and top floodgate electrode extremely.
8. Like nano of equipment request item of 1 record, is pinching this floating floodgate extremely electrode, but with this particle to the position has to control the floodgate extremely electrode;
Because of exerts the voltage in this control floodgate electrode extremely, causes the electric charge change of state of this floating floodgate extremely electrode and controls this particle the electric charge condition.
9. Like nano of equipment request item of 1 record, these side electrode pinches this particle to dispose with this another side electrode configuration;
This side floodgate electrode pinches this particle disposition to take plural number this floodgate extremely electrode with this floating floodgate electrode configuration extremely extremely;
In order to be pinching this floating floodgate extremely electrode, but with this particle to the way disposition has the control floodgate extremely electrode.
10. Like nano of equipment request item of 9 record, these Fang Dianji, this another Fang Dianji, this side floodgate extremely electrode, this floating floodgate extremely electrode and this control floodgate extremely electrode disposition in on at the same time.
|参考情報 （研究プロジェクト等）||CREST Establishment of Innovative Manufacturing Technology Based on Nanoscience AREA|
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