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Semiconductor device using germanium layer as channel region and manufacturing method thereof

Foreign code F170008991
File No. AF15-12TW
Posted date Mar 14, 2017
Country Taiwan
Application number 104136329
Gazette No. 201630076
Date of filing Nov 4, 2015
Gazette Date Aug 16, 2016
Priority data
  • P2014-225622 (Nov 5, 2014) JP
Title Semiconductor device using germanium layer as channel region and manufacturing method thereof
Abstract A semiconductor device which is provided with: a channel region which is formed within a germanium layer and has a first conductivity type; and a source region and a drain region, which are formed within the germanium layer and have a second conductivity type that is different from the first conductivity type. This semiconductor device is configured such that the oxygen concentration in the channel region is lower than the oxygen concentration in a junction interface between the source region and/or the drain region and a region that has the first conductivity type and surrounds the source region and/or the drain region.
Scope of claims [claim1]
1. Kinds of semiconductor devices, its characteristic lies in has: The channel region, it forms in Yu Zheceng, and has the 1st electric conduction; And the source region and draws region, it forms in the above germanium level, and has to be different from 2nd the electric conduction above 1st electric conduction; The oxygen concentration of above channel region is lower than the above source region and draws extremely in the region at least region and a surrounding above at least region, and has the above 1st electric conduction region's the oxygen concentration of joint contact surface.
[claim2]
2. Like request 1 semiconductor device, the oxygen concentration of above channel region is 1×10 16 cm below -3, the oxygen concentration of above joint contact surface is higher than 1×10 16 cm -3.
[claim3]
3. Like request 2 semiconductor device, the oxygen concentration of above channel region is 5×10 15 cm below -3.
[claim4]
4. Like request item 1 or 2 semiconductor devices, the above 1st electric conduction is p, the above 2nd electric conduction is n.
[claim5]
5. Manufacture of method 5.1 semiconductor devices, its characteristic lies in contains the following step, namely: Forms the channel region, and this channel region forms in Yu Zheceng, and has the 1st electric conduction; Forms the source region in the above germanium level and draws the region, and this source region and draws the region to be different extremely from 2nd the electric conduction above 1st electric conduction; And the hypothesis oxygen concentration, to make the oxygen concentration of above channel region to be lower than the above source region and draws extremely in the region at least region and a surrounding above at least region, and has the above 1st electric conduction region's the oxygen concentration of joint contact surface.
[claim6]
6. Like manufacture of method request 5 semiconductor devices, the step of above hypothesis oxygen concentration contains the following step, namely: Constitutes the region of above channel region to reveal in the above germanium level, and constitutes the region of above joint contact surface surface on of above germanium level not to reveal under the condition, carries on the above germanium level in the reducible environment gas the heat treatment.
[claim7]
7. Like manufacture of method request 6 semiconductor devices, the above heat treatment step is the following step, namely: Are 1×10 germanium of level 16 cm over -3 carry on the heat treatment the above channel region and above joint contact surface oxygen concentration.
[claim8]
8. Like request item manufacture of method 6 or 7 semiconductor devices, its contains the following step, namely: Before the above heat treatment step, in constituting the region and the region of constitution above joint contact surface above channel region inducts the oxygen.
[claim9]
9. Like manufacture of method request 5 semiconductor devices, the step of above hypothesis oxygen concentration contains the following step, namely: To the region of constitution above channel region, in constituting the region of above joint contact surface selectively inducts the oxygen.
[claim10]
10. Like request item 5 to 7 and in manufacture of method nines any semiconductor device, the step of above hypothesis oxygen concentration is the following step, namely: Establishes the above oxygen concentration, to make the oxygen concentration of constitution above channel region 1×10 16 cm below -3, and oxygen concentration of above joint contact surface is higher than 1×10 16 cm -3.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • TORIUMI, AKIRA
  • LEE, CHOONG-HYUN
  • NISHIMURA, TOMONORI
IPC(International Patent Classification)
Reference ( R and D project ) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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