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Transistor using piezoresistor as channel, and electronic circuit

Foreign code F170008999
File No. AF15-09TW
Posted date Mar 14, 2017
Country Taiwan
Application number 104108097
Gazette No. 201543482
Gazette No. I562144
Date of filing Mar 13, 2015
Gazette Date Nov 16, 2015
Gazette Date Dec 11, 2016
Priority data
  • P2014-052529 (Mar 14, 2014) JP
Title Transistor using piezoresistor as channel, and electronic circuit
Abstract (TWI562144)
Provided is a transistor equipped with: a piezoresistor through which a carrier is conducted; a source which injects the carrier into the piezoresistor; a drain which receives the carrier from the piezoresistor; a piezoelectric body which is provided so as to surround the piezoresistor, and which applies pressure to the piezoresistor; and a gate which applies voltage to the piezoelectric body so that the piezoelectric body applies pressure to the piezoresistor.
Scope of claims [claim1]
1. Kinds of transistors, its characteristic lies in has to have: Conducts the varistor of body carrier;
The source, pours into toward the above varistor body the above carrier;
Ji Ji, from the above varistor body receive above carrier;
The piezoelectrics, to surround the way of above varistor body to suppose, adds the pressure in the above varistor body;
And the floodgate extremely, exerts the voltage to make the above piezoelectrics to add the pressure in the above piezoelectrics in the above varistor body.
[claim2]
2. Like a request item of 1 transistor, the above floodgate extremely by surrounding the way of above piezoelectrics supposes, the above piezoelectrics is from the above varistor body toward above floodgate direction perhaps from the above floodgate extremely extremely toward the direction dielectric polarizations of above varistor body.
[claim3]
3. Like a request item of 1 transistor, the above floodgate is of conducting direction parallel direction above carrier is being equipped with plural number in the channel of above varistor in vivo with the conduction extremely, above piezoelectrics above parallel direction dielectric polarizations.
[claim4]
4. Like request item 1 to 3 any item of transistors, the above piezoelectrics by from the way of complete direction surrounding above varistor body supposes with of conducting direction quardrature above carrier.
[claim5]
5. Like request item 1 to 3 any item of transistors, the above piezoelectrics by from part of direction surrounding above varistor bodies supposes with of above carrier conducting direction quardratures way of one.
[claim6]
6. Like request item 1 to 3 any item of transistors, has to form supports the body on the foundation plate, the support above varistor body;
Above the above varistor body the surface is surface;
Above piezoelectrics is above surrounding above varistor body the superficial and above support body side of surface.
[claim7]
7. Like a request item of 6 transistor, the altitude of above support body is also bigger than the width of above varistor body.
[claim8]
8. Like a request item of 6 transistor, the material of above support body is the material of above varistor body is the same.
[claim9]
9. Like a request item of 6 transistor, the material of above support body is the material of above varistor body is different.
[claim10]
10. 1 kinds of transistors, its characteristic lies in has to have: Varistor body, carrier toward the 1st direction conduction;
The source, pours into toward the above varistor body the above carrier;
Ji Ji, from the above varistor body receive above carrier;
The piezoelectrics, from adds the pressure with the above 1st direction overlapping 2nd direction in the above varistor body;
And the floodgate extremely, exerts the voltage to make the above piezoelectrics to add the pressure in the above piezoelectrics in the above varistor body.
[claim11]
11. Like request item 1 or 10 transistors, the above source and above Ji Ji the above source and above draw extremely the surface to the above varistor body, but symmetrical structure;
The above varistor body, the above piezoelectrics and above floodgate are relative to the above among surface extremely separately, but symmetrical structure.
[claim12]
12. 1 kinds of electronic circuits, its characteristic lies in has to have: The electric circuit, connects between the 1st power sources and 2nd power sources;
And like request item 1 to 11 any item of transistors, the above source and above draws extremely the side connection above 1st power source, the above source and above draws extremely power source of post another side connection above electric circuit, will input in the above floodgate extremely will give the signal of interdiction toward the electric power of above electric circuit supplies.
[claim13]
13. Like the request item of 12 electronic circuits, have to have: Both well decides the electric circuit, remembers the material;
And the non-volatile part, decides the electric circuit to remember that the above both well the material gives the non-volatilely storage, will pass through the material of non-volatilely storage to return to original state in the above both well decides the electric circuit, the above electric circuit is the above both well decides the electric circuit.
[claim14]
14. Like the request item of 13 electronic circuits, the above non-volatile part is the connection between the above both well decides in the electric circuit the node and pilot wire.
[claim15]
15. 1 kinds of electronic circuits, its characteristic lies in has to have the non-volatile memory element, this non-volatile memory element has to have: Non-volatile part;
And like request item 1 to 11 any item of transistors, the above source or above Ji Ji series connected connect the above non-volatile part.
[claim16]
16. 1 kinds of electronic circuits, its characteristic lies in has to have: If requested the item 1 to 11 any item of transistors, and mutually for 1st of supplementary types and 2nd transistor, above 1st and 2nd transistor the above piezoelectrics the dielectric polarization directions were mutually reverse, was precisely when took the datum by the above source, but in the above floodgate added on the voltage or in negative voltage situation extremely, the above piezoelectrics may exert the pressure in the above varistor body's direction.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHUTO YUSUKE
  • KUROSAWA MINORU
  • FUNAKUBO HIROSHI
  • YAMAMOTO SHUICHIRO
  • SUGAHARA SATOSHI
IPC(International Patent Classification)
Reference ( R and D project ) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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