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GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE

Foreign code F170009021
File No. (S2015-1988-N15)
Posted date Mar 29, 2017
Country WIPO
International application number 2016JP074943
International publication number WO 2017034018
Date of international filing Aug 26, 2016
Date of international publication Mar 2, 2017
Priority data
  • P2015-166432 (Aug 26, 2015) JP
  • P2015-166434 (Aug 26, 2015) JP
Title GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE
Abstract [Problem] To provide a high-quality graphene film in which the number of layers is controlled, and a sapphire substrate that is optimal for obtaining the graphene film. To clarify the characteristics of the sapphire substrate for growing the graphene film that are optimal for achieving a high-quality graphene film and for enabling control of the number of layers.
[Solution] The inclination angle between the actual surface of the sapphire substrate for growing the graphene and the crystal lattice surface is set to greater than 0°, whereby a high-quality graphene film in which the number of layers is controlled can be obtained. A composite body is obtained having a single-crystal sapphire substrate for which the off angle is greater than 0°, a metal film epitaxially grown on the sapphire substrate, and a graphene film epitaxially grown on the metal film.
Outline of related art and contending technology BACKGROUND ART
Six-membered ring of carbon from the graphene film 2 consisting of a material of a two-dimensional plane structure, high carrier mobility, high transmittance, and have a high Young's modulus is known. The specific physical properties of a graphene film by taking advantage of, an existing device or an electrode of a flexible device than a high frequency transistor is expected to be applied to. Required in application to a device of a graphene film as the quality of the material, highly oriented pyrolytic graphite (HOPG) have the same degree of high crystallinity, the number of layers of graphene can be controlled and the like. Is the number of layers and the crystallinity of a graphene film, and the carrier mobility are known to affect the band gap and, also these characteristics greatly affects the device performance. Further, in the industrialization of a graphene film thereby improving the material quality, a large area are also needed.
As described above, is in a device production of graphene has high crystallinity, the number of layers controlled, a large area and the graphene film is demanded. These features are different by the manufacturing method of a graphene film. General current as a method of manufacturing a graphene film, made by exfoliation method HOPG, heat treated SiC, fabricating method Si is evaporated, and the chemical vapour deposition (CVD) method using the graphene film is formed on an underlying substrate method is mainly used. Of these techniques in a low cost and large area CVD method is the most, and high quality graphene film can be formed at said to means.
Graphene CVD method for heteroepitaxial growth with growth, it is important that the selection of the underlying substrate used. In the early study of CVD growth of a graphene film, single crystal or polycrystalline metal growth as a catalyst has been attempted. However, the metal single crystal substrate size is small, in addition, the area of the substrate used is a polycrystal which may facilitate an increase in the signal, the crystallinity of the graphene film can be a problem to be solved. Further, a large area XviD SiO2 is formed on a silicon substrate to graphene CVD growth also is tried, SiO2 be amorphous, the graphene film of high quality is difficult to obtain.
Therefore, a sapphire substrate is used in recent years the technology for making the graphene film has attracted attention. Because a lattice matching with the sapphire substrate is graphene, graphene growth on the surface of the single crystal becomes possible, a high-quality graphene can be obtained. In addition, the sapphire substrate surface even in the case where a metal film is deposited, for the heteroepitaxial growth of metal, metal single crystal film can be obtained. To the metal film on a sapphire substrate with a high-quality graphene film can be formed. Further, the sapphire substrate is in recent years and there is a large diameter, large-area graphene film can be produced. (Non-patent document 1, see Patent Document 1.)
In this way, a high-quality graphene film can be obtained, it may be possible and large, graphene is deposited on the sapphire substrate is used by the industry is expected. However, has been studied so far, the sapphire substrate or, single crystal metal film with the sapphire substrate is used in the CVD growth of a graphene film, a method of growing a graphene mainly the type of film or a metal film, and a discussion of the method of growing a metal, a metal film or the quality of the sapphire substrate effect of a graphene film is less understood and is not, therefore, a higher crystallinity, the number of layers controlled large-area graphene film was not able to be made.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA
  • PUBLIC UNIVERSITY CORPORATION YOKOHAMA CITY UNIVERSITY
  • Inventor
  • AOTA Natsuko
  • AIDA Hideo
  • TACHIBANA Masaru
  • MORISAKO Shiyo
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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