Top > Search of International Patents > Memory circuit

Memory circuit

Foreign code F170009037
File No. AF15-01EP3
Posted date Apr 26, 2017
Country EPO
Application number 16180034
Gazette No. 3109863
Date of filing Feb 19, 2013
Gazette Date Dec 28, 2016
Priority data
  • P2012-114988 (May 18, 2012) JP
  • 2013EP-0791432 (Feb 19, 2013) EP
Title Memory circuit
Abstract (EP3109863)
A memory circuit includes: a ferromagnetic tunnel junction device, a readout circuit configured to read out data written into the ferromagnetic tunnel junction device in a nonvolatile manner, and a control unit configured not to write data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when an output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner, and configured to write the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when the output of the readout circuit is not the same as the data to be written in a nonvolatile manner.
Scope of claims [claim1]
1. A memory circuit comprising: a ferromagnetic tunnel junction device; a readout circuit configured to read out data written into the ferromagnetic tunnel junction device in a nonvolatile manner; and a control unit configured not to write data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when an output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner, and configured to write the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when the output of the readout circuit is not the same as the data to be written in a nonvolatile manner.
[claim2]
2. The memory circuit according to claim 1, wherein the control unit determines whether the output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner, the control unit not writing the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when determining that the output of the readout circuit is the same as the data to be written in a nonvolatile manner, the control unit writing the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when determining that the output of the readout circuit is not the same as the data to be written in a nonvolatile manner.
[claim3]
3. The memory circuit according to claim 2, wherein, when receiving a skip signal, the control unit does not determine whether the output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner.
[claim4]
4. The memory circuit according to any of claims 1 through 3, wherein the readout circuit reads out the data that has already been properly written into the ferromagnetic tunnel junction device in the nonvolatile manner.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • YAMAMOTO SHUICHIRO
  • SHUTO YUSUKE
  • SUGAHARA SATOSHI
IPC(International Patent Classification)
Specified countries (EP3109863)
Contracting States: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Reference ( R and D project ) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close