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Thermal emission source and two-dimensional photonic crystal for use in the same emission source UPDATE

外国特許コード F170009047
整理番号 J1017-15WO
掲載日 2017年4月26日
出願国 アメリカ合衆国
出願番号 201515120254
公報番号 20170077675
公報番号 9972970
出願日 平成27年2月24日(2015.2.24)
公報発行日 平成29年3月16日(2017.3.16)
公報発行日 平成30年5月15日(2018.5.15)
国際出願番号 JP2015055161
国際公開番号 WO2015129668
国際出願日 平成27年2月24日(2015.2.24)
国際公開日 平成27年9月3日(2015.9.3)
優先権データ
  • 特願2014-039298 (2014.2.28) JP
  • 2015WO-JP55161 (2015.2.24) WO
発明の名称 (英語) Thermal emission source and two-dimensional photonic crystal for use in the same emission source UPDATE
発明の概要(英語) (US9972970)
A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element.
A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.
特許請求の範囲(英語) [claim1]
1. A thermal emission source comprising: a) a two-dimensional photonic crystal including a slab, the slab including: an n-layer made of an n-type semiconductor,
a quantum well structure layer having a quantum well structure, and
a p-layer made of a p-type semiconductor, the n-layer, the quantum well structure layer, and the p-layer being stacked in a mentioned order in a thickness direction,
wherein modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer;
b) electrodes configured to apply, to the slab, a voltage which is negative on a side of the p-layer and positive on a side of the n-layer; and
c) at least one base provided on the n-layer, the base configured to transfer heat from an external heat source to the two-dimensional photonic crystal.
[claim2]
2. The thermal emission source according to claim 1, wherein the quantum well structure layer has an n-type quantum well, and an i-layer made of an insulating material is provided between the quantum well structure layer and the p-layer.
[claim3]
3. The thermal emission source according to claim 1, wherein the quantum well structure layer has a p-type quantum well, and an i-layer made of an insulating material is provided between the quantum well structure layer and the n-layer.
[claim4]
4. The thermal emission source according to claim 1, wherein the two-dimensional photonic crystal has an electric resistance R and a capacitance C with which 1/(2pi RC) becomes equal to or higher than a desired frequency.
[claim5]
5. The thermal emission source according to claim 1, wherein, among the p-layer and the n-layer, the layer having a larger effective mass of a carrier has a higher level of carrier density than the layer having a smaller effective mass of the carrier.
[claim6]
6. The thermal emission source according to claim 1, wherein the electrodes are: a metallic p-electrode which is in contact with the p-layer and forms an ohmic junction with the p-type semiconductor constituting the p-layer; and
a metallic n-electrode which is in contact with the n-layer and forms an ohmic junction with the n-type semiconductor constituting the n-layer.
[claim7]
7. The thermal emission source according to claim 1, wherein the electrodes are provided on at least one of surfaces of the slab in such a manner that the electrodes surround an arrangement region where the modified refractive index areas are cyclically arranged.
[claim8]
8. A two-dimensional photonic crystal for use in a thermal emission source, the two-dimensional photonic crystal comprising: a slab including an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor, which are each stacked in a mentioned order in a thickness direction; and
modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer, the modified refractive index areas cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer,
wherein the two dimensional photonic crystal has an electric resistance R and a capacitance C with which 1/(2pi RC) becomes equal to or higher than a desired frequency.
[claim9]
9. A thermal emission source comprising: a) a two-dimensional photonic crystal including a slab, the slab including: an n-layer made of an n-type semiconductor,
a quantum well structure layer having a quantum well structure, and
a p-layer made of a p-type semiconductor, the n-layer, the quantum well structure layer, and the p-layer being stacked in a mentioned order in a thickness direction,
wherein modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer;
b) electrodes configured to apply, to the slab, a voltage which is negative on a side of the p-layer and positive on a side of the n-layer; and
c) a thermal transfer portion configured to transfer heat from an outside of the thermal emission source to the two-dimensional photonic crystal.
[claim10]
10. A thermal emission source comprising: a) a two-dimensional photonic crystal including a slab, the slab including: an n-layer made of an n-type semiconductor,
a quantum well structure layer having a quantum well structure, and
a p-layer made of a p-type semiconductor, the n-layer, the quantum well structure layer, and the p-layer being stacked in a mentioned order in a thickness direction,
wherein modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer;
b) electrodes configured to apply, to the slab, a voltage which is negative on a side of the p-layer and positive on a side of the n-layer;
c) a heating device configured to heat the two-dimensional photonic crystal by electric power; and
d) a thermal transfer portion configured to transfer heat from the heating device to the two-dimensional photonic crystal.
  • 発明者/出願人(英語)
  • NODA SUSUMU
  • INOUE TAKUYA
  • ASANO TAKASHI
  • DE ZOYSA MENAKA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
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