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PROCESSING METHOD AND PROCESSING APPARATUS

外国特許コード F170009163
整理番号 (S2016-0440-N0)
掲載日 2017年9月6日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP005372
国際公開番号 WO 2017141918
国際出願日 平成29年2月14日(2017.2.14)
国際公開日 平成29年8月24日(2017.8.24)
優先権データ
  • 特願2016-027126 (2016.2.16) JP
  • 特願2016-028408 (2016.2.17) JP
発明の名称 (英語) PROCESSING METHOD AND PROCESSING APPARATUS
発明の概要(英語) [Problem] To provide a processing method and a processing apparatus capable of realizing high-efficiency, high-precision processing with a simple configuration, using dry polishing for processing diamonds, etc.
[Solution] A processing apparatus 1 has a sapphire surface plate 2, and a specimen holder 4 for holding a single-crystal diamond 3. The processing apparatus 1 also has an ozone supply unit 5 for supplying ozone gas to the contact site of the sapphire surface plate 2 and the single-crystal diamond 3.
従来技術、競合技術の概要(英語) BACKGROUND ART
Diamond, 5.4eV has a wide band gap, thermal conductivity, such as dielectric breakdown electric field and excellent charge carrier mobility, next generation power semiconductor device has been promising as a material.
Diamond is used for manufacturing a semiconductor device, an underlying layer of the device at the atomic level the surface of the diamond substrate is smooth, and disturbance-free processing technique is required to finish said to be essential. However, diamond, high hardness and is chemically stable in order, processing may be extremely difficult, the development of fabrication technology and the technical problem.
For example, as a conventional processing method, such as chemical mechanical polishing using abrasive grains of the polishing by the chemical removal of the processing have been known. However, the polishing agent used for the chemical reaction in the removal rate is slow, a problem that the working efficiency thereof is insufficient.
Here, the above-described solution to the polishing environment, without the use of abrasive grains was tried to improve the machining efficiency of the processing method under the atmospheric environment is present.
For example, diamond polishing of the polished surface of the substrate in contact with a high pressure, the polishing from the rear surface of the polished surface of the substrate while irradiating it with ultraviolet rays, the substrate relative to the polishing by rubbing a polishing technique has been proposed (for example, see Patent Document 1).
In addition, the inventors of the present invention, the metal oxide to the polishing platen and the plasma irradiation or ultraviolet light, chemical contamination on the surface of the platen (in the form of organic contaminants) was removed and the, the lapping plate surface is hydrophilic (the outermost surface so as to expose a portion of the OH group) is a processing method has been proposed (for example, see Patent Document 2).
Patent Document 2 of the method, the lapping plate surface can be hydrophilized, and the workpiece to increase the reaction site of the surface atoms, the atoms of the workpiece surface is applied to the chemical processing is carried out.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY
  • 発明者(英語)
  • KUBOTA Akihisa
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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