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Manufacturing method of electrode structure with nanogap length, electrode structure with nanogap length and nano-device obtained through manufacturing method

Foreign code F170009229
File No. AF12-08CN2
Posted date Sep 14, 2017
Country China
Application number 201610573266
Gazette No. 106206685
Gazette No. 106206685
Date of filing Feb 28, 2012
Gazette Date Dec 7, 2016
Gazette Date Dec 24, 2019
International application number JP2012055002
International publication number WO2012121067
Date of international filing Feb 28, 2012
Date of international publication Sep 13, 2012
Priority data
  • P2011-050894 (Mar 8, 2011) JP
  • 201280012185 (Feb 28, 2012) CN
Title Manufacturing method of electrode structure with nanogap length, electrode structure with nanogap length and nano-device obtained through manufacturing method
Abstract A substrate (1) on which metal layers (2A and 2B) are arranged in pairs at an interval is immersed into an electroless plating solution, wherein the electroless plating solution is prepared by mixing a reducing agent and an interfacial agent into an electrolyte containing metal ions; the metal ions are reduced through the reducing agent; metal is separated out of the metal layers (2A and 2B) and the interfacial agent is attached to the surface of the metal to form an electrode (4A and 4B) pair of controlling the gap length into the nanoscale. Therefore, a manufacturing method of an electrode structure which can control a gap length deviation and has a nanogap length is provided. Furthermore, the electrode structure with the nanogap length capable of inhibiting the gap length deviation and a nano-device with the electrode structure are provided by employing the manufacturing method.
Outline of related art and contending technology BACKGROUND ART
The current highly information-oriented society is supported by the high integration of VLSI with the miniaturization of CMOS and the rapid development of semiconductor devices such as DRAM and NAND flash memory. By increasing the integration density, that is, by miniaturizing the minimum process size, the performance and function of the electronic device can be improved. However, with miniaturization, technical problems such as short channel effect, velocity saturation, quantum effect, and the like have become significant.
In order to solve the above problems, research has been conducted to find the limit of miniaturization technology, such as a multi-gate structure and a high-K gate insulating film. There is also a field in which research is advanced from a new viewpoint, different from the research of such top-down miniaturization. The field of research includes single electron electronics and molecular nanoelectronics. In the case of single electron electronics, since the functionality as a device using gate modulation is found by incorporating nanoparticles as single electron islands into an element having a 3-terminal structure via a double tunnel junction, single electron electronics is a new field of research that utilizes quantum effects caused by the single electron islands and the double tunnel junction in which electrons are encapsulated (non-patent document 1). Further, in the case of molecular nanoelectronics, since the functionality as a device is found by incorporating functional molecules into an element, molecular nanoelectronics utilizing quantum effects based on molecular dimensions and molecular inherent functions are also a new field of research (non-patent documents 2 and 3). The most representative tunneling effect among quantum effects refers to such an effect: a wave function of electrons having energy lower than barrier energy enters into the potential barrier, and passes through the potential barrier with a limited probability if the width of the potential barrier is narrow. The tunnel effect is a phenomenon that is feared as one cause of leakage current due to miniaturization of devices. Single electron and molecular nanoelectronics are a field of research in which the quantum effect is well controlled to exhibit a function as a device, and have been introduced as one of main technologies in a new search element of 2009 edition of International Technology Roadmap for Semiconductors (ITRS), and have attracted attention (non-patent document 4).
Further, by combining the method of manufacturing a nanogap, the nanogap electrode manufactured by the method, and a top-down process (top-down process), an element such as a transistor having a channel length of 5nm or less, which is difficult to realize only by the top-down process, can be manufactured.
In creating such a device, it is important to fabricate a structure capable of obtaining electrical contact with a single electron island or molecule of several nanometers and a so-called nanogap electrode. Various problems exist in the methods for fabricating nanogap electrodes disclosed so far. The mechanical cleaving method (non-patent documents 5 and 6) is a method of breaking a thin wire by mechanical stress, and although it can achieve a precision of the order of the picometer, it is not suitable for integration. Although the electromigration (non-patent documents 7 and 8) is a relatively simple method, it is often a problem in measurement that the yield is low and metal fine particles are present between nanogaps at the time of disconnection. Other methods have problems such as being not suitable for integration because of their high accuracy, requiring an extremely low temperature to prevent migration of gold, and requiring a long process time (non-patent documents 9 to 14).
The present inventors focused on an autocatalytic electroless gold plating method using iodine tincture (iodine tincture) as a method for producing a nanogap electrode having a high yield. Regarding such plating methods, the present inventors have disclosed a method for easily producing a plurality of nanogap electrodes having a gap length of 5nm or less at room temperature with high yield (non-patent document 15). FIG. 28 is a graph showing the variation of the nanogap length when the nanogap length is 5nm or less by the autocatalytic electroless gold plating method using iodine tincture. In FIG. 28, the horizontal axis represents Gap length (Gap Separation) nm, and the vertical axis represents Counts (Counts). The standard deviation of the nanogap length obtained by this method was 1.7 nm.
Documents of the prior art
Non-patent document 1: kuemmeth, k.i.bolotin, s.shi, and d.c. ralph, Nano lett,8, 12(2008).
Non-patent document 2: jo, j.e.grose, k.baheti, m.deshmukh, j.j.sokol, e.m.rumberger, d.n.hendrickson, j.r.long, h.park, and d.c.ralph, Nano letti, 6,2014(2006).
Non-patent document 3: yasutake, z.shi, t.okazaki, h.shinohara, and y.majima, Nano lett.5,1057(2005).
Non-patent document 4: ITRS Homepage, URL HYPERLINK "http:// www.itrs.net/" http:// www.itrs.net
Non-patent document 5: gruter, M.T.Gonzalez, R.Huber, M.Calame, and C.Schonenberger, Small,1,1067(2005).
Non-patent document 6: j.j.parks, a.r.champagne, g.r.hutchison, s.flores-Torres, h.d.abuna, and d.c.ralph, phys.rev.lett.99, 026001(2007).
Non-patent document 7: t.taychatanaptat, k.i.bolotin, f.kuemmeth, and d.c.ralph, nano.lett.,7,652(2007).
Non-patent document 8: blotin, f.kuemmeth, a.n.pasuppath, and d.c.ralph, appl.phys Lett,84,16(2004).
Non-patent document 9: s.kubatkin, a.danilov, m.hjort, j.cornil, j.l.bredas, n.s.hansen, p.hedegard and t.bjornholm, Nature,425,698(2003).
Non-patent document 10: sasao, y.azuma, n.kaneda, e.hase, y.miyamoto, and y.majima, jpn.j.appl.phys., Part 243, L337(2004).
Non-patent document 11: y. Kashimura, H. Nakashima, K. Furukawa, and K. Tojimitsu, Thin Solid Films, 438-.
Non-patent document 12: y.b. kervennic, d.vanmaekelbergh, l.p.kouwenhoven and h.s.j.van der Zant, appl.phys.lett.,83,3782 (2003).
Non-patent document 13: m.e. anderson, m.mihok, h.tanaka, l.p.tan, m.k.horn, g.s.mccarty, and p.s.weiss, adv.mater, 18,1020(2006).
Non-patent document 14: r.negishi, t.hasegawa, k.terabe, m.aono, t.ebihara, h.tanaka, and t.ogawa, appl.phys.lett.,88,223111(2006).
Non-patent document 15: y.yasutake, k.kono, m.kanehara, t.teranishi, m.r.buitelaar, c.g.smith, and y.majima, appl.phys.lett.,91,203107(2007).
Non-patent document 16: malikarjuma N.Nadagouda, and Rajender S.Varma, American Chemical Soviet Vol.7, No. 122582-.
Non-patent document 17: zhang, y.yasutake, Y, Shichibu, t.terraishi, y.manjima, Physical Review B72,205441,205441-1-205441-7, (2005).
Non-patent document 18: yuhsuke Yasutake, Zujin Shi, Toshiya Okazaki, Hisanori Shinohara, Yutaka Majima, Nano Letters Vol.5, No. 61057-1060, (2005).
Scope of claims [claim1]
1. A nanodevice comprising an electrode structure having a nanogap length,
the electrode structure includes one electrode and the other electrode provided with a nano gap; metal nanoparticles disposed between the one electrode and the other electrode; and a monomolecular film provided on both the one electrode and the other electrode,
in the electrode structure, a plurality of electrode pairs arranged to have a nanogap are arranged, and a standard deviation of each gap length of the plurality of electrode pairs is 0.5nm to 0.6 nm;
the manufacturing method of the electrode structure comprises the following steps: a substrate on which a metal layer is arranged in a pair with a gap is immersed in an electroless plating solution prepared by mixing a reducing agent and a surfactant into an electrolyte containing metal ions, whereby the metal ions are reduced by the reducing agent, a metal is deposited on the metal layer, and the surfactant is attached to the surface of the metal, thereby forming an electrode pair in which the length of the gap is controlled to be a nanometer size.

[claim2]
2. The nanodevice of claim 1, wherein: the monomolecular film is a self-assembled monomolecular film.

[claim3]
3. The nanodevice of claim 1, wherein: the metal nanoparticles are chemically adsorbed on the monomolecular film.

[claim4]
4. The nanodevice of claim 1, wherein: the metal nanoparticles are chemically adsorbed to the monolayer by chemical bonding of alkylthiol as a protecting group of the metal nanoparticles to a defective portion of a single molecule constituting the monolayer.

[claim5]
5. The nanodevice of claim 1, wherein: the one electrode and the other electrode are on the same surface, and 1 or more side gate electrodes are provided on the surface.

[claim6]
6. The nanodevice of claim 1, wherein: also includes a passivation film.

[claim7]
7. A nanodevice comprising an electrode structure having a nanogap length,
the electrode structure includes one electrode and the other electrode provided with a nano gap;
metal nanoparticles disposed between the one electrode and the other electrode; and
a monomolecular film interposed between the metal nanoparticles and the one electrode and between the metal nanoparticles and the other electrode,
the metal nanoparticles are adsorbed to the one electrode and the other electrode via thiol,
in the electrode structure, a plurality of electrode pairs arranged to have a nanogap are arranged, and a standard deviation of each gap length of the plurality of electrode pairs is 0.5nm to 0.6 nm;
the manufacturing method of the electrode structure comprises the following steps: a substrate on which a metal layer is arranged in a pair with a gap is immersed in an electroless plating solution prepared by mixing a reducing agent and a surfactant into an electrolyte containing metal ions, whereby the metal ions are reduced by the reducing agent, a metal is deposited on the metal layer, and the surfactant is attached to the surface of the metal, thereby forming an electrode pair in which the length of the gap is controlled to be a nanometer size.

[claim8]
8. The nanodevice of claim 7, wherein: the monomolecular film comprises an alkyl mercaptan.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MAJIMA YUTAKA
  • TERANISHI TOSHIHARU
  • MURAKI TARO
  • TANAKA DAISUKE
IPC(International Patent Classification)
Reference ( R and D project ) CREST Establishment of Innovative Manufacturing Technology Based on Nanoscience AREA
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