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SEMICONDUCTOR INSPECTION DEVICE 新技術説明会 実績あり

外国特許コード F170009272
整理番号 KIT15009PCT
掲載日 2017年10月31日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP073445
国際公開番号 WO 2017026483
国際出願日 平成28年8月9日(2016.8.9)
国際公開日 平成29年2月16日(2017.2.16)
優先権データ
  • 特願2015-158228 (2015.8.10) JP
発明の名称 (英語) SEMICONDUCTOR INSPECTION DEVICE 新技術説明会 実績あり
発明の概要(英語) Provided is a semiconductor inspection device 10 having an ultrasound probe 14 for transmitting ultrasonic waves which propagate through a liquid 12 inside a liquid tank 11 to reach a semiconductor element 13, and an analysis means 27 for detecting abnormalities of the semiconductor element 13 based on the received ultrasonic waves, the semiconductor inspection device (10) being provided with: a current applying means 17 that is connected to the semiconductor element 13, energizes the semiconductor element 13, and operates the semiconductor element 13; and flow generation means 16, 23, 24, 25 for generating a flow in the liquid 12 inside the water tank 11.
従来技術、競合技術の概要(英語) BACKGROUND ART
Conventional, SiC or a device such as IGBT of the power semiconductor device for failure analysis in (FA: Failure Analysis), mainly, the destruction of the power semiconductor device is performed by examining the decomposition, which has been specified as the cause of failure. On the other hand, the power semiconductor device, miniaturization, high integration is progressing, and energy device such as an electric car or a home appliance, and may be used in a wide range of products is expected. Therefore, cause failures in a power semiconductor device and the complexity of the factors is predicted, the power semiconductor elements are damaged by the analysis performed, the elucidation of the cause of the fault can not be a concern.
Therefore, the operation of the power semiconductor device in a state, a problem occurs in how to verify that the technique is demanded. Without breaking the power semiconductor device, as a method for detecting defect and the like, for example, Patent Document 1, the disclosure of which is 2 in the ultrasonic flaw detection method can be used. This method, a power semiconductor device can be applied to other types of semiconductor elements, the ultrasonic wave is propagated in the liquid to reach the semiconductor element, the reflected wave reflected by a semiconductor element and a semiconductor device on the basis of the transmitted wave, the internal state of the semiconductor element is inspected. In addition, the operation of the power semiconductor device in a state, a technique for performing ultrasonic flaw detection, as described in Non-Patent Document 1-14.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KYUSHU INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • OMURA Ichiro
  • WATANABE Akihiko
  • TSUKUDA Masanori
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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