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SPIN-POLARIZED HIGH BRIGHTNESS ELECTRON GENERATING PHOTOCATHODE AND METHOD FOR MANUFACTURING FOR SAME

外国特許コード F170009279
整理番号 (S2016-0566-N0)
掲載日 2017年11月7日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP013496
国際公開番号 WO 2017179440
国際出願日 平成29年3月30日(2017.3.30)
国際公開日 平成29年10月19日(2017.10.19)
優先権データ
  • 特願2016-081955 (2016.4.15) JP
発明の名称 (英語) SPIN-POLARIZED HIGH BRIGHTNESS ELECTRON GENERATING PHOTOCATHODE AND METHOD FOR MANUFACTURING FOR SAME
発明の概要(英語) [Problem] The objective of the present invention is to provide a spin-polarized high brightness electron generating photocathode for backside illumination which has a simple construction, and to provide a method for manufacturing the same.
[Solution] A thin film of a single-crystal compound semiconductor having negative electron affinity (NEA) is caused to form on a single-crystal substrate having nanometer surface flatness. This spin-polarized high brightness electron generating photocathode can be manufactured by metal-organic vapor phase epitaxy.
従来技術、競合技術の概要(英語) BACKGROUND ART
Is spin-polarized electrons in the present invention, the electron spin and the downward upward does not have the same ratio of the electron spin state electrons there. NEA property, the vacuum level than the conduction band energy of the conductive layer means a low state, this is, negative electron affinity or negative electron affinity of the called state. NEA and has, in the case where the spin-polarized electrons are generated and, alternatively, the spin-polarized electrons is not generated in some cases. Spin-polarized electrons and the generating ability, electrons located in the conduction band are moved to the vacuum level, the spin-polarized electrons have the ability to generate the term. High brightness electron generating substance is, to absorb light and generate electrons with high luminance can be referred to as a material. The air is removed, in order to make the desired amount of the chemical solution, the injection needle is directed upward, the air in the space disposed above the syringe plunger can be pushed toward to the bottom dead center, from the chemical solution and excess air in the syringe is extracted to perform the task. The photocathode of the present invention is to generate high brightness electron spin polarization, absorb light and generate a high brightness electron photocathode, in addition, polarization of the polarized light such as a laser absorbing the high-intensity spin-polarized electrons can be generated in the photocathode.
Conventional, spin-polarized electron generating device of the back-illuminated type according to the invention has been proposed (JP-1-4). Patent Document 1 is, as a main component on the substrate GaAs GaAs intermediate layer or buffer layer are stacked, a superlattice layer on a GaAs-GaAsP 10 mono-layers and, further on the thin film of GaAs (hereinafter, abbreviated as the active layer NEA.) Is formed by the spin-polarized electron generating device is disclosed. Is Patent Document 2, GaN and AlGaInN as a main component on a substrate an intermediate layer or buffer layer are stacked, on a GaAs-GaAsP superlattice layer 10 and mono-layers, such as NEA GaAs active layer is further formed on the spin-polarized electron generating device is disclosed. Patent Document 3 is, on the GaP substrate and the buffer at least the intermediate layer mainly composed of AlGaAsP layer are stacked, a superlattice layer on a GaAs-GaAsP and 10 mono-layers, such as NEA GaAs active layer is further formed on the spin-polarized electron generating device is disclosed. Patent Document 4 is, as a main component on the substrate GaAs InGaAs intermediate layer or buffer layer are stacked, a superlattice layer on a GaAs-GaAsP and 10 mono-layers, such as NEA GaAs active layer is further formed on the spin-polarized electron generating device is disclosed.
Of the conventional back-illuminated type of the spin-polarized electron generating device, the spin polarization of about 90% electrons are produced is possible, to convert light into electrons is very small and the quantum efficiency of the device (generally 0.4% or less) by, in making it difficult to generate high brightness electron (103 Acm-2 sr-1 of very low luminance) can be, such as NEA GaAs of the uppermost substrate and the active layer or intermediate layer between the buffer layer is always necessary to interpose the manufacturing steps can be very complex, light transmittance of the substrate used for the element to the absorption edge of the excitation light is limited by the narrow wavelength range, such as the problem to be improved for practical use.
However, an extremely high degree of spin-polarized to 90% or more while maintaining high quantum efficiency can be to generate high brightness electron, having a simple structure, can be used in a wide wavelength range of the excitation light, the spin polarization of the back-illuminated photocathode the electrons generated in the high brightness and a manufacturing method thereof, almost not known.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
  • 発明者(英語)
  • KIN Shuko
  • TAKEDA Yoshikazu
  • YAMAMOTO Masahiro
  • KAMIYA Yukihide
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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