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REFERENCE SAMPLE WITH INCLINED SUPPORT BASE, METHOD FOR EVALUATING SCANNING ELECTRON MICROSCOPE, AND METHOD FOR EVALUATING SIC SUBSTRATE NEW

外国特許コード F180009308
整理番号 KG0153-WO01
掲載日 2018年1月24日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP016737
国際公開番号 WO 2017188380
国際出願日 平成29年4月27日(2017.4.27)
国際公開日 平成29年11月2日(2017.11.2)
優先権データ
  • 特願2016-089094 (2016.4.27) JP
発明の名称 (英語) REFERENCE SAMPLE WITH INCLINED SUPPORT BASE, METHOD FOR EVALUATING SCANNING ELECTRON MICROSCOPE, AND METHOD FOR EVALUATING SIC SUBSTRATE NEW
発明の概要(英語) In this reference sample (41), a step/terrace structure comprising monocrystalline SiC is formed. The surface of each terrace has either a first layer orientation or a second layer orientation. Furthermore, when the angle formed by an electron beam emitted from a scanning electron microscope, with respect to a normal line of the surface of a terrace, is defined as the incident electron angle, the reference sample (41) has a contrast, i.e. the difference in brightness between an image of a terrace which has the first layer orientation and which is directly below the surface, and an image of a terrace which has the second layer orientation and which is directly below the surface, which changes in accordance with the incident electron angle. Accordingly, even if a SiC substrate has an off angle (in the range of 1-8˚ for instance), a clear contrast reflecting the difference between the first layer orientation and the second layer orientation directly below the surface can be obtained, regardless of the off angle, by using an inclined support base (20a) which enables the off angle to be corrected.
特許請求の範囲(英語) [claim1]
1. A standard sample for a scanning electron microscope for evaluating the performance of a scanning electron microscope and a scanning electron microscope And an inclined support table for supporting a standard sample for a scanning electron microscope The standard sample is made of a hexagonal SiC single crystal, has an off angle, and has a half unit height A step / terrace structure consisting of steps and a flat terrace at the atomic level is formed, and the surface of each terrace is , Either the first laminated orientation or the second laminated orientation, the inclined support Is the same tilt angle as the off angle of the standard specimen for scanning electron microscope, and the supporting surface of the terrace An angle formed by an electron beam irradiated from the scanning electron microscope with respect to a vertical line is defined as an incident electron angle Sometimes, the image of the terrace with the first laminated orientation beneath the surface and the image of the terrace with the second laminated orientation beneath the surface , Regardless of the off angle of the standard specimen for the scanning electron microscope, the contrast which is the difference between the light and dark, A standard sample with a tilt support, characterized by changing according to electronic angle.

[claim2]
2. The standard sample with a tilt support according to claim 1, wherein the incident electron angle is from 30 ° to 4 The contrast becomes the largest between 0 ° and 0 °.

[claim3]
3. The standard sample with a tilt support according to claim 1, wherein a vertical line of the surface of the terrace is defined as a rotation axis And the angle at which the standard specimen for scanning electron microscope is rotated is taken as the sample rotation angle , Wherein the contrast varies in accordance with the sample rotation angle.

[claim4]
4. The standard sample with the inclined support according to claim 1, wherein the concentric or similar hexagonal step / It has a terrace structure and features that the height increases from the center towards the outside with a half unit Standard sample with inclined support.

[claim5]
5. The standard sample with a tilt support according to claim 1, wherein the terrace width is 0.1 μm or more and 2 A standard sample with an inclined support, characterized in that it is 0 μm or less.

[claim6]
6. The standard sample with a tilt support according to claim 1, wherein the step / terrace structure has a 4 (0 0 0 1) Si surface or (0 0 0 - 1) C surface of the substrate surface of H - SiC or 6 H - SiC , And heating the substrate under Si vapor pressure to form the inclined support table Standard sample with.

[claim7]
7. A standard sample with a tilt support stand as set forth in claim 1, while changing the incident electron angle, an electron beam , And comparing the change in contrast obtained in advance with the change in contrast obtained in advance , Characterized by evaluating the performance with respect to the direction of the electron beam irradiated by the scanning electron microscope Evaluation method of microscope.

[claim8]
8. The evaluation method of a scanning electron microscope according to claim 7, wherein the scanning type scanning electron microscope comprising 4 H - SiC An image obtained by irradiating an electron beam from a scanning electron microscope to a standard specimen for electron microscopy and an image obtained by irradiating 6 Irradiating an electron beam from a scanning electron microscope to the standard sample for scanning electron microscope made of H - SiC With the image obtained in the scanning electron microscope, the performance on the depth of the electron beam irradiated by the scanning electron microscope And evaluating the scanning electron microscope.

[claim9]
9. An electron beam is irradiated from a scanning electron microscope to the standard sample with the inclined supporting stand according to claim 1 , The contrast obtained by irradiating an electron beam to the SiC substrate to be evaluated, To evaluate the quality of the SiC substrate.

[claim10]
10. The method of evaluating a SiC substrate according to claim 9, wherein, with respect to the standard sample for a scanning electron microscope The surface just below the surface obtained by irradiating the electron beam from the scanning electron microscope at a predetermined incident electron angle is The in-plane distribution of luminance obtained from the terraces of the first laminated orientation and the second laminated orientation and the in-plane distribution of luminance obtained from the terraces of the SiC substrate Plane distribution of the luminance obtained by irradiating the electron beam at the same incident electron angle with respect to And evaluating the quality of the SiC substrate by comparing the SiC substrate with the SiC substrate.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KWANSEI GAKUIN
  • 発明者(英語)
  • KANEKO TADAAKI
  • ASHIDA KOJI
  • KUTSUMA YASUNORI
国際特許分類(IPC)
指定国 (WO2017188380)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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