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VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBSTRATE EQUIPPED WITH EPITAXIAL LAYER NEW

外国特許コード F180009309
整理番号 KG0156-WO01
掲載日 2018年1月24日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP016738
国際公開番号 WO 2017188381
国際出願日 平成29年4月27日(2017.4.27)
国際公開日 平成29年11月2日(2017.11.2)
優先権データ
  • 特願2016-092073 (2016.4.28) JP
発明の名称 (英語) VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBSTRATE EQUIPPED WITH EPITAXIAL LAYER NEW
発明の概要(英語) An SiC container (3) formed from a material including polycrystalline SiC is accommodated in a TaC container (2) formed from a material including TaC. The TaC container (2) is heated in an environment in which a temperature gradient is generated, while a base substrate (40) is accommodated inside the SiC container (3), such that the inside of the TaC container (2) reaches Si vapour pressure. As a result, C atoms sublimated as a result of etching the inner surface of the SiC container (3), and Si atoms in the atmosphere bond with each other, and a monocrystalline 3C-SiC epitaxial layer (41) is grown on the base substrate (40).
特許請求の範囲(英語) [claim1]
1. Inside a TaC container made of a material containing TaC, SiC composed of a material containing polycrystalline SiC In the state where the container is accommodated and the base substrate is accommodated in the SiC container, the inside of the TaC container is filled with Si vapor And the TaC container is heated by providing a temperature gradient so that the inner surface of the SiC container is C atoms sublimed by etching are bonded to Si atoms in the atmosphere, whereby the underlying substrate To grow an epitaxial layer of single-crystal SiC on the epitaxial layer Vapor-phase epitaxial growth method according to claim.

[claim2]
2. The vapor-phase epitaxial growth method according to claim 1, wherein the material of the base substrate is an Al compound or N compound.

[claim3]
3. The vapor-phase epitaxial growth method according to claim 1, wherein the material of the base substrate is SiC, <1 1 -2 0> direction or the off angle with respect to the <1 0 0 0> direction is 1 ° or less in vapor phase epitaxial growth Method.

[claim4]
4. The vapor phase epitaxial growth method according to claim 1, wherein in the epitaxial layer growth step, the temperature gradient is 2 ° C./mm Or less in a gas phase epitaxial growth method.

[claim5]
5. The vapor phase epitaxial growth method according to claim 1, wherein in the epitaxial layer growth step, a plurality of And the epitaxial layer is grown on each of the plurality of the underlying substrates Thereby forming an epitaxially grown epitaxial layer.

[claim6]
6. The vapor phase epitaxial growth method according to claim 1, wherein the inner surface of the TaC container is made of S i or Si compound By heating at the time of growth of the epitaxial layer, Si atoms sublimate from the inner surface of the TaC container, And the inside of the TaC container is made to be Si vapor pressure.

[claim7]
7. The vapor-phase epitaxial growth method according to claim 1, wherein the crystal polymorph of the epitaxial layer is 3 C-SiC In a gas phase epitaxial growth method.

[claim8]
8. The vapor-phase epitaxial growth method according to claim 1, wherein the epitaxial layer has a crystal polymorph of 4 H-SiC Or 6 H - SiC.

[claim9]
9. A method for producing a substrate with an epitaxial layer, which uses the vapor phase epitaxial growth method according to claim 1.

[claim10]
10. The method for producing a substrate with an epitaxial layer according to claim 9, wherein the material of the base substrate is SiC , The base substrate is accommodated in the TaC container without heating the SiC container and heated under Si vapor pressure Etching the underlying substrate with the epitaxial layer.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KWANSEI GAKUIN
  • 発明者(英語)
  • KANEKO TADAAKI
  • KUTSUMA YASUNORI
  • ASHIDA KOJI
  • HASHIMOTO RYO
国際特許分類(IPC)
指定国 (WO2017188381)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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