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VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBSTRATE EQUIPPED WITH EPITAXIAL LAYER

Foreign code F180009309
File No. KG0156-WO01
Posted date Jan 24, 2018
Country WIPO
International application number 2017JP016738
International publication number WO 2017188381
Date of international filing Apr 27, 2017
Date of international publication Nov 2, 2017
Priority data
  • P2016-092073 (Apr 28, 2016) JP
Title VAPOUR-PHASE EPITAXIAL GROWTH METHOD, AND METHOD FOR PRODUCING SUBSTRATE EQUIPPED WITH EPITAXIAL LAYER
Abstract An SiC container (3) formed from a material including polycrystalline SiC is accommodated in a TaC container (2) formed from a material including TaC. The TaC container (2) is heated in an environment in which a temperature gradient is generated, while a base substrate (40) is accommodated inside the SiC container (3), such that the inside of the TaC container (2) reaches Si vapour pressure. As a result, C atoms sublimated as a result of etching the inner surface of the SiC container (3), and Si atoms in the atmosphere bond with each other, and a monocrystalline 3C-SiC epitaxial layer (41) is grown on the base substrate (40).
Scope of claims [claim1]
1. Inside a TaC container made of a material containing TaC, SiC composed of a material containing polycrystalline SiC In the state where the container is accommodated and the base substrate is accommodated in the SiC container, the inside of the TaC container is filled with Si vapor And the TaC container is heated by providing a temperature gradient so that the inner surface of the SiC container is C atoms sublimed by etching are bonded to Si atoms in the atmosphere, whereby the underlying substrate To grow an epitaxial layer of single-crystal SiC on the epitaxial layer Vapor-phase epitaxial growth method according to claim.

[claim2]
2. The vapor-phase epitaxial growth method according to claim 1, wherein the material of the base substrate is an Al compound or N compound.

[claim3]
3. The vapor-phase epitaxial growth method according to claim 1, wherein the material of the base substrate is SiC, <1 1 -2 0> direction or the off angle with respect to the <1 0 0 0> direction is 1 ° or less in vapor phase epitaxial growth Method.

[claim4]
4. The vapor phase epitaxial growth method according to claim 1, wherein in the epitaxial layer growth step, the temperature gradient is 2 ° C./mm Or less in a gas phase epitaxial growth method.

[claim5]
5. The vapor phase epitaxial growth method according to claim 1, wherein in the epitaxial layer growth step, a plurality of And the epitaxial layer is grown on each of the plurality of the underlying substrates Thereby forming an epitaxially grown epitaxial layer.

[claim6]
6. The vapor phase epitaxial growth method according to claim 1, wherein the inner surface of the TaC container is made of S i or Si compound By heating at the time of growth of the epitaxial layer, Si atoms sublimate from the inner surface of the TaC container, And the inside of the TaC container is made to be Si vapor pressure.

[claim7]
7. The vapor-phase epitaxial growth method according to claim 1, wherein the crystal polymorph of the epitaxial layer is 3 C-SiC In a gas phase epitaxial growth method.

[claim8]
8. The vapor-phase epitaxial growth method according to claim 1, wherein the epitaxial layer has a crystal polymorph of 4 H-SiC Or 6 H - SiC.

[claim9]
9. A method for producing a substrate with an epitaxial layer, which uses the vapor phase epitaxial growth method according to claim 1.

[claim10]
10. The method for producing a substrate with an epitaxial layer according to claim 9, wherein the material of the base substrate is SiC , The base substrate is accommodated in the TaC container without heating the SiC container and heated under Si vapor pressure Etching the underlying substrate with the epitaxial layer.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • KWANSEI GAKUIN
  • Inventor
  • KANEKO TADAAKI
  • KUTSUMA YASUNORI
  • ASHIDA KOJI
  • HASHIMOTO RYO
IPC(International Patent Classification)
Specified countries (WO2017188381)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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